|
|
|
International Rectifier
|
Part No. |
IRFR9214PBF IRFU9214PBF
|
OCR Text |
...VDS = VGS, ID = -250A S VDS = -50v, ID = -1.7a -100 VDS = -250v, VGS = 0V A -500 VDS = -200V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 14 ID = -1.7a 3.1 nC VDS = -200V 6.8 VGS = -10V, See Fig. 6 and 13 VDD = -125V ID = -1.7a... |
Description |
HEXFET POWER MOSFET ( VDSS = -250v , RDS(on) = 3.0Ω , ID = -2.7a ) HEXFET POWER MOSFET ( VDSS = -250v , RDS(on) = 3.0ヘ , ID = -2.7a )
|
File Size |
252.89K /
10 Page |
View
it Online |
Download Datasheet |
|
|
|
ST Microelectronics
|
Part No. |
L4970A
|
OCR Text |
...v o output votage v i = 15v to 50v i o = 5a; v o = v re f 5 5.1 5.2 v 5 d v o line regulation v i = 15v to 50v i o = 5a; v o = v re f ...7a v 9 hyst turn-off hysteresys 1 v 7a i 9q quiescent current v 12 = 0; s1 = d 13 19 ma 7a i 9oq ... |
Description |
10A SWITCHING REGULATOR
|
File Size |
6,734.80K /
21 Page |
View
it Online |
Download Datasheet |
|
|
|
SamHop Microelectronics...
|
Part No. |
STM122N
|
OCR Text |
...switching characteristics v dd =50v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =1.7a v ds =5v,i d =1.7a input capacitance output capacitance dynamic chara... |
Description |
Super high dense cell design for low RDS(ON). Dual N-Channel Enhancement Mode Field Effect Transistor
|
File Size |
101.77K /
7 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|