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Alpha
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| Part No. |
AOL1400L
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| OCR Text |
... r ds(on) < 5.5m ? (v gs = 4.5v) general description the aol1400 uses advanced trench technology to provide excellent r ds(on) , shoot-t...20a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v ... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor N沟道增强型场效应
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| File Size |
114.42K /
5 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOK40N30
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| OCR Text |
...d =40a dynamic parameters v ds =5v, i d =250 m a v ds =240v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, ...20a 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd ... |
| Description |
300V,40A N-Channel MOSFET
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| File Size |
374.26K /
5 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOK20S60
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| OCR Text |
...=30v v ds =600v, v gs =0v v ds =5v,i d =250 m a a. the value of r q ja is measured with the device in a still air environ ment with t a ...20a a aa a mos tm power transistor
typical electrical and thermal characteristics 0 5 10 15 20 2... |
| Description |
600V 20a a MOS Power Transistor
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| File Size |
349.18K /
6 Page |
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it Online |
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Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HUF76423D3 HUF76423D3S HUF76423D3ST
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| OCR Text |
... = 10V - rDS(ON) = 0.037, VGS = 5v * Simulation Models - Temperature Compensated PSPICE(R) and SABERTM Electrical Models - Spice and SABER T...20a, VGS = 10V (Figures 9, 10) ID = 20a, VGS = 5v (Figure 9) ID = 20a, VGS = 4.5v (Figure 9) THERMAL... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20a I(D) | TO-252AA 20 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
20a, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETFairchild
20a, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFETPower MOSFETFairchild
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| File Size |
196.89K /
10 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOK20N60
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| OCR Text |
... r 125 ns t d(off) 128 ns v ds =5v, i d =250 m a v ds =480v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, ...20a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =480v, i... |
| Description |
600V,20a N-Channel MOSFET
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| File Size |
486.56K /
5 Page |
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it Online |
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Price and Availability
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