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60ns Datasheet PDF File

For 60ns Found Datasheets File :: 59+ Page :: | 1 | 2 | 3 | 4 | <5> | 6 |

					SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL-6 KM48V8104CKL-5 KM48V8104CKL-45 KM48V8004CKL-45 KM48V8004CK-45
Description	8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
File Size	387.62K / 21 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
Description	8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
File Size	415.01K / 21 Page	View it Online	Download Datasheet

					AMIC Technology
Part No.	LP62E16256C-TSERIES LP62E16256CU-60LLT LP62E16256CU-70LLT
Description	256K X 16 BIT LOW VOLTAGE CMOS SRAM 60ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM 70ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM
File Size	157.25K / 14 Page	View it Online	Download Datasheet

					Hynix Semiconductor
Part No.	HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 HY51VS65163HGJ-6 HY51VS65163HGLJ-45 HY51VS65163HGLJ-6 HY51VS65163HGLJ-5 HY51VS65163HGLT-45 HY51VS65163HGLT-5 HY51VS65163HGT-45 HY51VS65163HGLT-6 HY51VS65163HGT-5 HY51VS65163HGT-6
Description	4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
File Size	97.47K / 11 Page	View it Online	Download Datasheet

					AMIC Technology
Part No.	A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S-60L A42L0616V-45L A42L0616V-50L A42L0616V-60 A42L0616V-60L
Description	45ns 1M x 16bit CMOS dynamic ram with EDO page mode 50ns 1M x 16bit CMOS dynamic ram with EDO page mode 60ns 1M x 16bit CMOS dynamic ram with EDO page mode
File Size	227.88K / 25 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B-JC-60 K4F640811B-JC-45 K4F640811B-JC-50 K4F640811B-JC-60 K4F660811B-JC-45
Description	8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
File Size	366.42K / 20 Page	View it Online	Download Datasheet

					Hynix Semiconductor
Part No.	GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17403C-6 GM71S17403CL-5 GM71S17403CL-7 GM71C17403C-5 GM71C17403CL-6 GM71S17403C-5 GM71S17403CL-6 GM71C17403C GM71C17403CL-5 GM71S17403C-7 GM71C17403CLJ-5 GM71C17403CLJ-7 GM71C17403CJ-5 GM71C17403CJ-7 GM71C17403CJ-6 GM71CS17403CJ-5 GM71CS17403CJ-6 GM71CS17403CJ-7
Description	CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns 4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
File Size	96.47K / 10 Page	View it Online	Download Datasheet

					AEROFLEX[Aeroflex Circuit Technology]
Part No.	ACT-F1288N ACT-F1288N-150P7T ACT-F1288N-150P7Q ACT-F1288N-150P7M ACT-F1288N-150P7I ACT-F1288N-150P7C ACT-F1288N-150P4T ACT-F1288N-150P4Q ACTF128K8 ACT-F1288N-060F6C ACT-F1288N-060F6I ACT-F1288N-060F6M ACT-F1288N-060F6Q ACT-F1288N-060F6T ACT-F1288N-060P4C ACT-F1288N-060P4I ACT-F1288N-060P4M ACT-F1288N-060P4Q ACT-F1288N-060P4T ACT-F1288N-060P7C ACT-F1288N-060P7I ACT-F1288N-060P7M ACT-F1288N-060P7Q ACT-F1288N-060P7T ACT-F1288N-070F6C ACT-F1288N-070F6I ACT-F1288N-070F6M ACT-F1288N-070F6Q ACT-F1288N-070F6T ACT-F1288N-070P4C ACT-F1288N-070P4I ACT-F1288N-070P4M ACT-F1288N-070P4Q ACT-F1288N-070P4T ACT-F1288N-070P7C ACT-F1288N-070P7I ACT-F1288N-070P7Q ACT-F1288N-070P7T ACT-F1288N-090F6C ACT-F1288N-090F6I ACT-F1288N-090F6M ACT-F1288N-090F6Q ACT-F1288N-090F6T ACT-F1288N-090P4C ACT-F1288N-090P4I ACT-F1288N-090P4M ACT-F1288N-090P4Q ACT-F1288N-090P4T ACT-F1288N-090P7C ACT-F1288N-090P7I ACT-F1288N-090P7M ACT-F1288N-090P7Q ACT-F1288N-090P7T ACT-F1288N-120F6C ACT-F1288N-120F6I ACT-F1288N-120F6M ACT-F1288N-120F6Q ACT-F1288N-120F6T ACT-F1288N-120P4C ACT-F1288N-120P4I ACT-F1288N-120P4M ACT-F1288N-120P4Q ACT-F1288N-120P4T ACT-F1288N-120P7C ACT-F1288N-120P7I ACT-F1288N-120P7M ACT-F1288N-120P7Q ACT-F1288
Description	High speed 1 Megabit monolithic FLASH. Speed 150ns. High speed 1 Megabit monolithic FLASH. Speed 90ns. High speed 1 Megabit monolithic FLASH. Speed 70ns. ACT-F128K8 High Speed 1 Megabit Monolithic FLASH High speed 1 Megabit monolithic FLASH. Speed 60ns. High speed 1 Megabit monolithic FLASH. Speed 120ns.
File Size	149.32K / 21 Page	View it Online	Download Datasheet

					HITACHI[Hitachi Semiconductor]
Part No.	HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260CTT-7 HM514260CTT-8 HM514260CTT-6 HM514260CTT-6R HM514260C HM51S4260CTT-8 HM514260CLJ-6 HM514260CLJ-6R HM514260CLTT-6 HM514260CLTT-6R HM514260CLTT-7 HM514260CLTT-8 HM51S4260C HM51S4260CJ-6 HM51S4260CJ-6R HM51S4260CJ-7 HM51S4260CJ-8 HM51S4260CLJ-6 HM51S4260CLJ-6R HM51S4260CLJ-7 HM51S4260CLJ-8 HM51S4260CLTT-6 HM51S4260CLTT-6R HM51S4260CLTT-7 HM51S4260CLTT-8 HM51S4260CTT-6 HM51S4260CTT-6R HM51S4260CTT-7
Description	80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY 60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
File Size	260.25K / 27 Page	View it Online	Download Datasheet

					Vishay Semiconductors Vishay Intertechnology, Inc. International Rectifier, Corp. Vishay Beyschlag
Part No.	30HFUR-100 30HFUR-200 30HFUR-300 30HFUR-400 30HFUR-500 30HFUR-600 30HFU-600 30HFU-300 30HFU-200 30HFU-100 30HFU-500 30HFU-400
Description	DIODE 30 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB, Rectifier Diode Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 600V的快恢复二极管中的DO - 203AB（请 5）封 SUPER FAST RECTIFIER DIODE 30 Amp 60ns 超快速整流二极管30安培60纳秒 100V Fast Recovery Diode in a DO-203AB (DO-5) package 100V的快恢复二极管中DO - 203AB（请 5）封 500V Fast Recovery Diode in a DO-203AB (DO-5) package 300V Fast Recovery Diode in a DO-203AB (DO-5) package Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
File Size	209.24K / 6 Page	View it Online	Download Datasheet

For 60ns Found Datasheets File :: 59+ Page :: | 1 | 2 | 3 | 4 | <5> | 6 |

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