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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA45H7687M1-101 RA45H7687M1
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| OCR Text |
...0 820 840 FREQUENCY f(M Hz) 860 880
T
V DD =12.8V V GG1 =3.4V V GG2 =5V P in=50m W P out
2 ,3
-30 -40 HARMONICS (dBc) -50
nd
rd
HARM O NICS v e rsus FREQ UENCY
V DD =12.8V V GG1 =3.4V V GG2 =5V P in=50m W
3 rd
2 nd
... |
| Description |
RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
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| File Size |
164.81K /
9 Page |
 View
it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA45H8994M1-101 RA45H8994M1
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| OCR Text |
...%) 70 60 50 40 30 20 10 860 870 880 890 900 910 920 930 940 950 960 F R E Q U E N C Y f(M H z )
T
2
nd
,3
rd
H AR M O N IC S v e r s u s F R E Q U E N C Y
-3 0
P out
HARMONICS (dBc)
-4 0 -5 0 -6 0 -7 0 -8 0
3 rd... |
| Description |
RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
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| File Size |
174.98K /
9 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD05MMP1
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| OCR Text |
...0.858 0.868 0.869 0.868 0.874 0.880 0.886 0.893 0.893 0.897 0.901 0.908 0.911 0.909 0.915 0.916 0.917 0.921 0.925 0.924 0.923 0.921 0.922 0.919 0.906 0.920 0.933 (ang) -171.5 -172.9 -174.2 -174.7 -175.0 -175.1 -175.3 -175.8 -176.2 -176.4 -1... |
| Description |
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
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| File Size |
124.65K /
7 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
RMPA1852
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| OCR Text |
...
Mode: GMSK Band: EGSM Tx band (880-915 MHz)
Modulation: None (CW), Typical Peak/Average = 0dB Pulse Rate: TX = 577s, 25% duty cycle, Tframe = 4.615mS Test conditions unless otherwise stated: Vcc = 3.5V, Vramp = Vramp Max., Zin = Zout = 50... |
| Description |
Quad-Band GSM/EDGE PA Module
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| File Size |
458.86K /
11 Page |
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it Online |
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UOT[Unity Opto Technology]
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| Part No. |
MIE-556L3U MIE-546L3U 556L3U
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| OCR Text |
...mm) package Peak wavelength p = 880 nm Good spectral matching to si-photodetector Radiant angle : 50
l
FLAT DENOTES CATHODE
l
l
0.50 TYP. (.020)
23.40 MIN. (.920)
l
1.00MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3
A
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| Description |
Infrared Emitting Diodes (UL Listed)
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
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| File Size |
32.18K /
2 Page |
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it Online |
Download Datasheet |
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UOT[Unity Opto Technology]
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| Part No. |
MIE-554L3
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| OCR Text |
...5mm) package Peak wavelength P =880 nm Good spectral matching to Si-Photodetecto Radiant angle : 50
Notes : 1. Tolerance is 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is ... |
| Description |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
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| File Size |
30.87K /
2 Page |
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it Online |
Download Datasheet |
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UOT[Unity Opto Technology]
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| Part No. |
MIE-544L3
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| OCR Text |
...5mm) package Peak wavelength P =880 nm Good spectral matching to Si-Photodetecto Radiant angle : 40
A
2.54 (.100) 1.00MIN (.040)
l
l
l l
C
l
Notes : 1. Tolerance is 0.25 mm (.010") unless otherwise noted. 2. Protruded r... |
| Description |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
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| File Size |
31.81K /
2 Page |
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it Online |
Download Datasheet |
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UOT[Unity Opto Technology]
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| Part No. |
MIE-536L3U MIE-526L3U
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| OCR Text |
...mm) package Peak wavelength p = 880 nm Good spectral matching to si-photodetector Radiant angle : 30
l
FLAT DENOTES CATHODE
l
l
0.50 TYP. (.020)
23.40 MIN. (.920)
l
1.00MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3
A
... |
| Description |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
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| File Size |
32.22K /
2 Page |
View
it Online |
Download Datasheet |
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