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  8k refresh cycles every 64 ms Datasheet PDF File

For 8k refresh cycles every 64 ms Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Thomas
Part No. HS2264 HS2155 HS2153 HS2265 HS2160 HS2154 HS2261 HA2262 HS2262 HA2263 HA2261 HS2263 HS2157 HS2165 HA2165 HA2159 HA2154 HA2257
Description Rating(Amps)(Max.): 0.5; Rated Voltage(VAC): 125; Mating/Unmating cycles: 200; Operating Temperature Range (degrees C): -25 to 60; Generic Name: RJ-11
Rating(Amps)(Max.): 0.5; Rated Voltage(VAC): 30; Mating/Unmating cycles: 200; Operating Temperature Range (degrees C): -25 to 60; Generic Name: RJ-45
Rating(Amps)(Max.): 0.5; Rated Voltage(VAC): 125; Mating/Unmating cycles: 200; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C
Rating(Amps)(Max.): 0.5; Rated Voltage(VAC): 125; Mating/Unmating cycles: 200; Operating Temperature Range (degrees C): -25 to 60; Generic Name: RJ-45
Peripheral IC 外围芯片

File Size 380.90K  /  3 Page

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    HM5164805FTT-5 HM5165805FTT-5 HM5164805FTT-6 HM5165805FTT-6 HM5164805FLJ-5 HM5165805FLJ-5 HM5164805FLJ-6 HM5165805FLJ-6

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Elpida Memory
Part No. HM5164805FTT-5 HM5165805FTT-5 HM5164805FTT-6 HM5165805FTT-6 HM5164805FLJ-5 HM5165805FLJ-5 HM5164805FLJ-6 HM5165805FLJ-6 HM5165805FLTT-5 HM5165805FLTT-6 HM5165805F HM5165805FJ-5 HM5165805FJ-6 HM5164805F HM5164805FJ-5 HM5164805FJ-6 HM5164805FLTT-5 HM5164805FLTT-6
Description 64 M EDO DRAM (8-Mword × 8-bit) 8 k refresh/4 k refresh
64 M EDO DRAM (8-Mword ? 8-bit) 8 k refresh/4 k refresh
64 M EDO DRAM (8-Mword 隆驴 8-bit) 8 k refresh/4 k refresh

File Size 214.50K  /  34 Page

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    HM51W16165 HM51W16165J-5 HM51W16165J-6 HM51W16165J-7 HM51W16165LJ-5 HM51W16165LJ-6 HM51W16165LJ-7 HM51W16165LTT-5 HM51W1

ELPIDA MEMORY INC
Part No. HM51W16165 HM51W16165J-5 HM51W16165J-6 HM51W16165J-7 HM51W16165LJ-5 HM51W16165LJ-6 HM51W16165LJ-7 HM51W16165LTT-5 HM51W16165LTT-6 HM51W16165LTT-7 HM51W16165TT-5 HM51W16165TT-6 HM51W16165TT-7 HM51W18165J-5 HM51W18165J-6 HM51W18165J-7 HM51W18165 HM51W18165LJ-5 HM51W18165LJ-6 HM51W18165LJ-7 HM51W18165LTT-5 HM51W18165LTT-6 HM51W18165LTT-7 HM51W18165TT-5 HM51W18165TT-6 HM51W18165TT-7
Description 1M X 16 EDO DRAM, 60 ns, PDSO44
16 M EDO DRAM (1-Mword x 16-bit) 4 k refresh/1 k refresh

File Size 596.15K  /  35 Page

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    KMM372F213CS KMM372F213CK KMM372F1600BK

Samsung Semiconductor Co., Ltd.
Part No. KMM372F213CS KMM372F213CK KMM372F1600BK
Description 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K refresh, 3.3V
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8k refresh, 3.3V 1,600 × 72的DRAM内存ECC的使6Mx4KK的刷新,3.3

File Size 456.86K  /  20 Page

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    225-0017-000

List of Unclassifed Manufacturers
Part No. 225-0017-000
Description 5 polarizations available, Rated 500 mating cycles

File Size 377.30K  /  2 Page

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    62R22-01-040S

Grayhill, Inc
Part No. 62R22-01-040S
Description Redundant Circuitry 1 Million Rotational cycles

File Size 350.28K  /  2 Page

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    TT Electronics.
Part No. PHS07-V1B1MEGE2001 PHS07-H1B1MEGE2001 PHS07-H2B1MEGE2001 PHS07-V3B1MEGE2001 PHS07-H3B1MEGE2001 PHS07-V1B1MEGE2006 PHS07-H1B1MEGE2006 PHS07-V2B1MEGE2006 PHS07-H2B1MEGE2006 PHS07-V1B1MEGE2007 PHS07-H1B1MEGE2007
Description High accuracy and long life over 1 million cycles

File Size 422.63K  /  3 Page

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    23-1

Grayhill, Inc
Part No. 23-1
Description Momentary Contact 100,000 cycles of Operation

File Size 48.49K  /  1 Page

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    SIEMENS A G
SIEMENS AG
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Siemens Semiconductor G...
Part No. HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HYB5117405BT-70 Q67100-Q1098 HYB5116405BT-70 HYB5116405BT-60
Description 4M x 4-Bit Dynamic RAM 2k & 4k refresh 4M X 4 EDO DRAM, 70 ns, PDSO24
POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88%
4M x 4-Bit Dynamic RAM 2k & 4k refresh

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    HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HYB3117405BJ-60 HYB5117405BJ-60 HYB3116405BT-60 HYB5116405BJ-50- HYB3116

SIEMENS AG
http://
Siemens Semiconductor Group
Part No. HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HYB3117405BJ-60 HYB5117405BJ-60 HYB3116405BT-60 HYB5116405BJ-50- HYB3116405BJ-60 HYB3116405BTL-50 HYB3116405BTL-60 HYB3117405BT-60 HYB3117405BT-50 HYB3116405BJ-50
Description RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k refresh

File Size 147.43K  /  28 Page

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For 8k refresh cycles every 64 ms Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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