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  cmos data separator for fdd Datasheet PDF File

For cmos data separator for fdd Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    AT28C64BNBSP AT28C64B-15PI AT28C64B-20PI AT28C64B-25PC AT28C64B-20JC AT28C64B-25JC AT28C64B-15TC AT28C64B-20TI AT28C64B

Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
Part No. AT28C64BNBSP AT28C64B-15PI AT28C64B-20PI AT28C64B-25PC AT28C64B-20JC AT28C64B-25JC AT28C64B-15TC AT28C64B-20TI AT28C64B AT28C64B-25JI AT28C64B-15SC AT28C64B-15TI AT28C64B-25PI AT28C64B-15JC AT28C64B-15JI AT28C64B-15PC AT28C64B-25TI AT28C64B-W 28C64 AT28C64B-15SI AT28C64B-20 AT28C64B-20JI AT28C64B-20PC AT28C64B-20SC AT28C64B-20SI AT28C64B-20TC AT28C64B-25 AT28C64B-25SC AT28C64B-25SI AT28C64B-25TC AT28C64B-15
Description 64K 8K x 8 Battery-Voltage cmos E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-VQFN -40 to 85 8K X 8 EEPROM 5V, 150 ns, PDSO28
64K 8K x 8 cmos E2PROM
8-Bit Shift Registers With Output Registers 16-SSOP -40 to 85
64K EEPROM with 64-Byte Page & Software data Protection
64K (8K x 8) cmos E2PROM with Page Write and Software data Protection
From old datasheet system
64K (8K x 8) Parallel EEPROM with Page Write and Software data Protection

File Size 235.34K  /  13 Page

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    K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45
Description 8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit cmos Dynamic RAM with Extended data Out 8米8位的cmos动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit cmos Dynamic RAM with Extended data Out

File Size 194.12K  /  21 Page

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    SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL-6 KM48V8104CKL-5 KM48V8104CKL-45 KM48V8004CKL-45 KM48V8004CK-45
Description 8M x 8bit cmos dynamic RAM with extended data out, 50ns
8M x 8bit cmos dynamic RAM with extended data out, 45ns
8M x 8bit cmos dynamic RAM with extended data out, 60ns

File Size 387.62K  /  21 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL-6 KM48V8104BKL-45 KM48V8104BKL-6
Description 8M x 8bit cmos dynamic RAM with extended data out, 45ns
8M x 8bit cmos dynamic RAM with extended data out, 60ns
8M x 8bit cmos dynamic RAM with extended data out, 50ns

File Size 385.67K  /  21 Page

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    GLT4160L04S-50J3 GLT4160L04S-50TC GLT4160L04SE-60TC GLT4160L04SE-60J3 GLT4160L04SE-50J3 GLT4160L04SE-70J3 GLT4160L04SE-7

List of Unclassifed Manufacturers
G-LINK Technology
Part No. GLT4160L04S-50J3 GLT4160L04S-50TC GLT4160L04SE-60TC GLT4160L04SE-60J3 GLT4160L04SE-50J3 GLT4160L04SE-70J3 GLT4160L04SE-70TC GLT4160L04S-40J3 GLT4160L04-70TC GLT4160L04-70J3 GLT4160L04S-60J3 GLT4160L04E-40J3 GLT4160L04E-40TC GLT4160L04S-40TC GLT4160L04-60J3 GLT4160L04E-50J3 GLT4160L04E-50TC GLT4160L04E-60J3 GLT4160L04E-60TC GLT4160L04E-70TC GLT4160L04-40J3 GLT4160L04-40TC GLT4160L04-50J3 GLT4160L04-50TC GLT4160L04-60TC GLT4160L04E-70J3 GLT4160L04S-70J3 GLT4160L04SE-40J3 GLT4160L04SE-50TC GLT4160L04SE-40TC GLT4160L04S-70TC GLT4160L04S-60TC
Description 60ns; 4M x 4 cmos dynamic RAM with extended data output
40ns; 4K x 4 cmos dynamic RAM with extended data output
50ns; 4M x 4 cmos dynamic RAM with extended data output

File Size 580.34K  /  22 Page

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    K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
Description 8M x 8bit cmos dynamic RAM with extended data out, 50ns
8M x 8bit cmos dynamic RAM with extended data out, 60ns
8M x 8bit cmos dynamic RAM with extended data out, 45ns

File Size 415.01K  /  21 Page

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    K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
Description 8M x 8bit cmos dynamic RAM with extended data out, 45ns
8M x 8bit cmos dynamic RAM with extended data out, 50ns
8M x 8bit cmos dynamic RAM with extended data out, 60ns

File Size 415.47K  /  21 Page

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    PCM-3538T-A10

AAEON Technology
Part No. PCM-3538T-A10
Description Using Transmitter Device Module THC63LVDM83A Chipset, Transmitter Converts 28-bit of cmos/TTL data Into LVDS data Stream

File Size 166.57K  /  1 Page

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    MC74HC157A MC74HC157AD MC74HC157ADR2 MC74HC157ADT MC74HC157ADTR2 MC74HC157AN MC74HC157 MC74HC157AFEL MC74HC157A-D

ONSEMI[ON Semiconductor]
Part No. MC74HC157A MC74HC157AD MC74HC157ADR2 MC74HC157ADT MC74HC157ADTR2 MC74HC157AN MC74HC157 MC74HC157AFEL MC74HC157A-D
Description Quad 2-Input data Selectors/Multiplexers High-Performance Silicon-Gate cmos
data Selector/Multiplexer 2-Input Q
CAP ELECT 100UF 35V TK SMD

File Size 177.97K  /  8 Page

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    Samsung Electronic
Part No. K4E16708112D K4E160811D K4E160811D-B K4E160811D-F K4E160812D K4E160812D-B K4E160812D-F K4E170811D K4E170811D-B
Description 2M x 8Bit cmos Dynamic RAM with Extended data Out data Sheet
2M x 8 bit cmos dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit cmos dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
2M x 8 bit cmos dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.

File Size 254.30K  /  21 Page

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For cmos data separator for fdd Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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