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JDS Uniphase, Corp.
JDS Uniphase Corporation
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| Part No. |
OAA-18F1000C3 OAA-18F1000C5 OAA-18F1000C9 OAA-18F1000CA OAA-18F1000CC OAA-18F1000CE OAA-18F1001C3 OAA-18F1001C5 OAA-18F1001C9 OAA-18F1001CA OAA-18F1001CC OAA-18F1001CE OAA-18F1002C3 OAA-18F1002C5 OAA-18F1002C9 OAA-18F1002CA OAA-18F1002CC OAA-18F1002CE OAA-18F1003C3 OAA-18F1003C5 OAA-18F1003C9 OAA-18F1003CA OAA-18F1003CC OAA-18F1003CE
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| OCR Text |
... integrated PIN receiver/erbium doped fiber amplifier (EDFA) * Wide dynamic range
Applications
* Long haul and metro networks * Tunable laser booster * Full C-band amplification * Power equalization and flexible pre-emphasis * Overcom... |
| Description |
FIBER OPTIC EDFA AMPLIFIER, 1529-1562nm, PANEL MOUNT, SC/UPC CONNECTOR
FIBER OPTIC EDFA AMPLIFIER, 1529-1562nm, PANEL MOUNT, E2000 CONNECTOR
FIBER OPTIC EDFA AMPLIFIER, 1529-1562nm, PANEL MOUNT, MU CONNECTOR
FIBER OPTIC EDFA AMPLIFIER, 1529-1562nm, PANEL MOUNT, FC/UPC CONNECTOR
FIBER OPTIC EDFA AMPLIFIER, 1529-1562nm, PANEL MOUNT, SC/APC CONNECTOR
FIBER OPTIC EDFA AMPLIFIER, 1529-1562nm, PANEL MOUNT, FC/APC CONNECTOR
Compact,Two-Stage Amplifier with Mid-Stage Access
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| File Size |
162.31K /
4 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN1226
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| OCR Text |
...will reach farther into a lower doped region than a higher doped region. the depletion region will extend into the channel region reducing the actual channel length formed by diffusion to the effective channel length. this creates the possi... |
| Description |
UNDERSTANDING LDMOS DEVICE FUNDAMENTALS
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| File Size |
38.53K /
4 Page |
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Agilent Technologies, Inc.
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| Part No. |
HMPP-3893-BLK
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| OCR Text |
...trinsic) silicon is heavily doped on the top and bottom faces to form p and n regions. the result is a diode with a very thick, very pure i region. the epitaxial layer (or epi) diode starts as a wafer of heavily doped silicon (t... |
| Description |
100 V, SILICON, PIN DIODE LEADLESS, ULTRA MINI, QFN, MINIPAK-4
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| File Size |
482.87K /
13 Page |
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it Online |
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AGILENT TECHNOLOGIES
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| Part No. |
HSMS-2700
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| OCR Text |
...formed between a metal and an n-doped or a p-doped semiconductor. When a metalsemiconductor junction is formed, free electrons flow across the junction from the semiconductor and fill the free-energy states in the metal. This flow of electr... |
| Description |
High Power Clipping/clamping Diode
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| File Size |
77.36K /
8 Page |
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it Online |
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Price and Availability
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