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  energy 802.15.4 Datasheet PDF File

For energy 802.15.4 Found Datasheets File :: 496    Search Time::2.266ms    
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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MC13201
OCR Text ...rformed based upon the baseband energy integrated over a specific time interval. The digital backend performs Differential Chip Detection (D...802.15.4 Standard requirements. Figure 5 shows energy detection/LQI reported level versus input powe...
Description 2.4 GHz Low Power Transceiver for the IEEE 802.15.4 Standard

File Size 231.37K  /  26 Page

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    MC34670 MCZ34670EG_R2

Freescale Semiconductor, Inc
Part No. MC34670 MCZ34670EG_R2
OCR Text ...odel Machine Model Output Clamp energy 12 mJ NotesNotes 1. ESD1 testing is performed in accordance with the Human Body Model (CZAP ...802.3af Powered Devices (PD) and a high performance current mode switching regulator. It allows a de...
Description IEEE 802.3af PD With Current Mode Switching Regulator

File Size 526.49K  /  24 Page

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    HFA3842B HFA3842BIN HFA3842BIN-TK

Intersil Corporation
Part No. HFA3842B HFA3842BIN HFA3842BIN-TK
OCR Text ...EADY) PHY Medium Busy (CCA) PHY energy Detect (CAL_EN) Transmitter Enable (TX_PE) Receiver Enable (or PHY Sleep Control) (RX_PE) PHY Reset (...802.11 protocol at 11Mb/s rates. Systems designed for lower performance applications may be able to ...
Description PCMCIA/USB Wireless LAN Medium Access Controller

File Size 343.65K  /  26 Page

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    MC13191

Freescale Semiconductor, Inc
Part No. MC13191
OCR Text ... automation and motor control * energy Management (lighting, HVAC, etc.) * Asset tracking and monitoring Potential consumer applications inc...802.15.4 PHY Compliant -- 16 Channels -- Supports 250 kbps O-QPSK data in 5.0 MHz channels and full ...
Description 2.4 GHz ISM Band Low Power Transceiver

File Size 270.28K  /  24 Page

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    FILTRONIC[Filtronic Compound Semiconductors]
Part No. FMS2017 FMS2017-000-WP FMS2017-000-EB FMS2017-000-FF FMS2017-000-GP
OCR Text ...esults for 25m wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression ...
Description 2.4GHz DPDT GaAs Single-Band WLAN Switch 砷化镓双刀双掷.4GHz单频无线局域网交换

File Size 162.23K  /  5 Page

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    MACOM[Tyco Electronics]
Part No. MASW6030G
OCR Text ...rams is recommended. Ultrasonic energy and time should be adjusted to the minimum levels achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package. 3 M/A-COM Inc. and its affiliates reserve the ri...
Description GaAs DPDT Switch DC - 6.0 GHz

File Size 72.18K  /  3 Page

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    APT6015JVR

Advanced Power Technology
Part No. APT6015JVR
OCR Text ...ive) 1 Repetitive Avalanche energy Single Pulse Avalanche energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RD...802 8 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. ...
Description POWER MOS V 600V 35A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 70.28K  /  4 Page

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    APT20M11JVFR

Advanced Power Technology
Part No. APT20M11JVFR
OCR Text ...ive) 1 Repetitive Avalanche energy Single Pulse Avalanche energy 3600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RD...802 8 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm

File Size 74.73K  /  4 Page

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