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  enhancementmode Datasheet PDF File

For enhancementmode Found Datasheets File :: 97    Search Time::1.39ms    
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    Motorola
Part No. MRF65225D
OCR Text ... nchannel enhancementmode lateral mosfet designed for class a and class ab common source, linear power amplifiers in the 960 mhz range. the mrf65225r1 has been specifically designed for use in communications network (g...
Description MRF6522-5R1 RF Power Transistor

File Size 114.99K  /  8 Page

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    Motorola
Part No. MRF652260D
OCR Text ... nchannel enhancementmode lateral mosfet designed for broadband commercial and industrial applications at frequen- cies up to 1.0 ghz and specified for the gsm 925 960 mhz band. the high gain and broadband performance...
Description MRF6522-60 RF Power Transistor

File Size 155.45K  /  12 Page

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    NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D

ON Semiconductor
Part No. NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D
OCR Text ...t -4.5 amps, -12 volts pchannel enhancementmode single so8 package features ? high density power mosfet with ultra low r ds(on) providing higher efficiency ? miniature so8 surface mount package saves board space ? diode exhibits high speed...
Description Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package
Receptacle With A Standard Tail
Power MOSFET -4.5 Amps-12 Volts

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    MGY25N120-D

ON Semiconductor
Part No. MGY25N120-D
OCR Text enhancementmode silicon gate this insulated gate bipolar transistor (igbt) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. short circuit rated igbt's are specifical- ly suited for ap...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 135.40K  /  6 Page

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    MGY25N120D-D

ON Semiconductor
Part No. MGY25N120D-D
OCR Text enhancementmode silicon gate this insulated gate bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. ...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate

File Size 143.49K  /  6 Page

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    Motorola, Inc.
Part No. MRF1507 MRF1507T1
OCR Text enhancementmode lateral mosfets the mrf1507 is designed for broadband commercial and industrial applications at frequencies to 520 mhz. the high gain and broadband performance of this device makes it ideal for largesignal, common source amp...
Description LATERAL NCHANNEL BROADBAND RF POWER MOSFET

File Size 209.24K  /  12 Page

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    Motorola
Part No. MC14578
OCR Text ...omparator without loading. four enhancementmode mosfets are also included on chip. these fets can be externally configured as opendrain or totempole outputs. the drains have onchip staticprotecting diodes. therefore, the output voltage must...
Description MC14578 Micro-Power Comparator plus Voltage Follower

File Size 239.03K  /  8 Page

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    MGW12N120D-D

ON Semiconductor
Part No. MGW12N120D-D
OCR Text enhancementmode silicon gate this insulated gate bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. s...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate

File Size 143.47K  /  6 Page

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    MGP11N60E-D

ON Semiconductor
Part No. MGP11N60E-D
OCR Text enhancementmode silicon gate this insulated gate bipolar transistor (igbt) uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. its new 600 v igbt technology is specifically suited for app...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 107.78K  /  6 Page

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