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Vishay
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Part No. |
EKS
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Description |
Aluminum Electrolytic Capacitors, Radial Style, Polarized AI Electrolytic Capacitor, High C-U Product, Small Dimensions, Long Lifetime, extended temp Range (105°C)
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File Size |
54.74K /
6 Page |
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Aeroflex Circuit Technology
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Part No. |
5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 5962D9960601TUA 5962D9960601TUC 5962D9960601TUX 5962D9960602QUA 5962D9960602QUC 5962D9960602QUX 5962D9960602TUA 5962D9960602TUX 5962D9960602TUC 5962-9960601TUA 5962-9960602TUX 5962-9960601TUC 5962P9960601TUA 5962P9960601TUC 5962P9960601TUX UT7Q512K-UPX UT7Q512K-UWC
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Description |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. extended industrial temp. Lead finish factory option. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option. 512K x 8 SRAM. 100ns access time, 5V operation. extended industrial temp rang flow. Lead finish gold.
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File Size |
106.53K /
16 Page |
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ZF Electronics, Corp.
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Part No. |
PUMA2U16001LM-20 PUMA2U16001LM-17 PUMA2U16001LI-17 PUMA2U16001I-15 PUMA2U16001L-17 PUMA2U16001-20
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Description |
x32 EPROM module 10MS, 8 TSSOP, EXT temp, GREEN, 2.7V(SERIAL EE) 10MS, 8 SOIC, IND temp, GREEN, 2.7V(SERIAL EE) 10MS, 8 PDIP, EXT temp, GREEN, 2.7V(SERIAL EE) 10MS, 8 SOIC, IND temp, 2.7V(SERIAL EE) X32号存储器模块
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File Size |
349.33K /
8 Page |
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ITT, Corp. Pericom Technology (Shanghai) CO., Ltd. Diodes, Inc. Electronic Theatre Controls, Inc.
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Part No. |
X2864HJ-70 X2864BPI-18 X2864HJ-90 X2864BGM-12 X2864BGM-15 X2864HJI-90 X2864HJI-70 X2864BPI-15 X2864BJ-12 X2864HFM-90 X2864HPI-70 X2864BPI-25 X2864BGM-18 X2864BJI-20 X2864BJI-25 X2864BDI-18 X2864BEI-18 X2864BJI-18 X2864BJ-15 X2864BJI-15 X2864BEI-15 X2864HDI-70 X2864BP-20 X2864BDM-12 X2864BDM-15 X2864BDM-18 X2864BDMB-15 X2864BDMB-18 X2864BDMB-12 X2864BEMB-15 X2864BEMB-18 X2864BEM-18
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Description |
10MS, 8 PDIP, IND temp, GREEN, 1.8V(SERIAL EE) 10MS, SOT23, IND temp, GREEN, 1.8V(SERIAL EE) 32M CONFIG FLASH, 44 PLCC, IND(FPGA) 10 MHZ, 8 LAP, IND temp(FPGA) 25NS, 24 SOIC, IND temp(EPLD) 10MS, 8 TSSOP, EXT temp, 2.7V(SERIAL EE) DIE SALE,1.8V, 11MIL(SERIAL EE) 10MHZ, 8 PDIP, IND temp(FPGA) 10MHZ, 20 PLCC, COM temp(FPGA) 10MHZ, 44 TQFP, COM temp(FPGA) 128Kx8 EEPROM 20NS,CERDIP,883C; LEV B FULLY COMPLIANT(EPLD) 10MHZ, 20 SOIC, COM temp, 5K MOQ(FPGA) 10 MHZ, 20 PLCC, IND temp, GREEN(FPGA) x8的EEPROM 30MHZ, 3.3V, 8 LAP, COM temp(FPGA) x8的EEPROM 10MHZ, 20 PLCC, IND temp(FPGA) x8的EEPROM 30MHZ, 20 PLCC, IND temp, GREEN(FPGA) x8的EEPROM
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File Size |
253.10K /
8 Page |
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Bourns, Inc. Samsung Semiconductor Co., Ltd.
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Part No. |
K4E170411D K4E160411D
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Description |
4M x 4Bit CMOS Dynamic RAM with extended Data Out 4米4位的CMOS动态随机存储器的扩展数据输 Aluminum Electrolytic Radial Lead Hi temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk 4米4位的CMOS动态随机存储器的扩展数据输
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File Size |
259.16K /
21 Page |
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NIC Components, Corp.
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Part No. |
PUMA67S4000M-020 PUMA67S4000M-35 PUMA2S4000M-020 PUMA2S4000M-35 PUMA2S4000I-020 PUMA67S4000I-020 PUMA67S4000AI-35 PUMA67S4000A-025
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Description |
SRAM|128KX32|CMOS|LDCC|68PIN|CERAMIC 2NS, 352 BGA, COM temp(FPGA) SRAM|128KX32|CMOS|PGA|66PIN|CERAMIC 10 MHZ, 3.3V, 44 PLCC, IND temp(FPGA) 10MHZ, 20 PLCC, COM temp(FPGA) 静态存储器| 128KX32 |的CMOS |美巡赛| 66PIN |陶瓷 128K X 32 MULTI DEVICE SRAM module, 25 ns, CQMA68
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File Size |
196.62K /
10 Page |
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Price and Availability
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