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For fixture Found Datasheets File :: 14172 Search Time::5.609ms
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				Infineon Technologies A...
Part No.	PTVA084007NF
OCR Text	...ted in infineon production test fixture) v dd = 48 v, i dq = 800 ma, p out = 80 w avg, ? 1 = 805 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 10 db @ 0.01% ccdf. characteristic symbol min typ max unit ...
Description	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ?805 MHz
File Size	407.24K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T23H300-24S A2T23H300-24SR6
OCR Text	...1,2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 750 ma, v gsb =0.7vdc,p out =66wavg., f = 2300 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr meas...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	484.75K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T23H160-24S A2T23H160-24SR3
OCR Text	...1,2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 350 ma, v gsb =0.7vdc,p out =28wavg., f = 2300 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr meas...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	446.60K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21S260W12NR3
OCR Text	...nctional tests (1) (in nxp test fixture, 50 ohm system) v dd =28vdc,i dq = 1600 ma, p out = 56 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.8...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	332.74K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21S260-12S A2T21S260-12SR3
OCR Text	...al tests (4) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1200 ma, p out = 65 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.8...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	457.46K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21S161W12S A2T21S161W12SR3
OCR Text	...nctional tests (1) (in nxp test fixture, 50 ohm system) v dd =28vdc,i dq = 600 ma, p out = 38 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	301.43K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21S160-12S A2T21S160-12SR3
OCR Text	...al tests (4) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 600 ma, p out = 38 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	452.74K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21H450W19S A2T21H450W19SR6
OCR Text	...2,3) (in freescale doherty test fixture, 50 ohm system) v dd =30vdc,i dqa = 800 ma, v gsb =0.7vdc, p out = 89 w avg., f = 2110 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	408.87K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21H410-24S A2T21H410-24SR6
OCR Text	...1,2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 600 ma, v gsb =0.4vdc, p out = 72 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	420.03K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21H360-24SR6
OCR Text	...1,2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 500 ma, v gsb =0.5vdc, p out = 63 w avg., f = 2140 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	497.43K / 16 Page	View it Online	Download Datasheet

For fixture Found Datasheets File :: 14172 Search Time::5.609ms
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