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  ghz-2.170 Datasheet PDF File

For ghz-2.170 Found Datasheets File :: 3382    Search Time::1.735ms    
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    MRF18085B MRF18085BLSR3 MRF18085BR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF18085B MRF18085BLSR3 MRF18085BR3
OCR Text ...ith frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. * GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain - 12.5 dB (Typ) @ 85 Watts CW Efficiency - 50% (Typ) @ 8...
Description RF Power Field Effect Transistors

File Size 607.07K  /  12 Page

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    TGS8422 TGS8422-SCC

TRIQUINT[TriQuint Semiconductor]
TriQuint Semiconductor,Inc.
Part No. TGS8422 TGS8422-SCC
OCR Text GHz Frequency Range 2.5 dB Insertion Loss at Midband 37 dB Isolation at Midband Typical Input Power of 19 dBm at 1 dB Gain Compression Typical SWR of 1.6:1 2.286 x 2.057 x 0.150 mm (0.090 x 0.081x 0.006 in.) Description The TriQuint TGS...
Description SP4T FET Switch

File Size 535.37K  /  6 Page

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    UPA803 UPA803T UPA803T-T1

NEC[NEC]
Part No. UPA803 UPA803T UPA803T-T1
OCR Text ... FEATURES * High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) 0.65 0.65 2.10.1 1.250.1 1.3 Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) * A Surface Mounting Package Adopted * Built-in 2 Transistors (2 x 2SC4570) ...
Description NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

File Size 56.84K  /  8 Page

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    2SC3841 2SC3841P 2SC3841Q 2SC3841T62 2SC3841T64 2SC3841-L 2SC3841-T1B 2SC3841-VM

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC3841 2SC3841P 2SC3841Q 2SC3841T62 2SC3841T64 2SC3841-L 2SC3841-T1B 2SC3841-VM
OCR Text ...ain Bandwidth Procuct; fT = 4.0 GHz TYP. * Low Collector to Base Time Constant; CC rb'b = 4.0 ps TYP. * Low Output Capacitance; Cob = 1.5 pF MAX. 2.90.2 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Maximum Voltages and Current Collecto...
Description For UHF tuner, MIXER and OSC.
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-346
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits 晶体管|晶体管|叩| 12V的五(巴西)总裁| 30mA的一(c)|的SOT - 346

File Size 94.81K  /  8 Page

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    CLY32-00 CLY32-05 CLY32-10 CLY32

INFINEON[Infineon Technologies AG]
Part No. CLY32-00 CLY32-05 CLY32-10 CLY32
OCR Text ...r frequencies from 100 MHz to 6 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power ad...2 S 3 D Package CLY32-00 (ql) CLY32-05 (ql) CLY32-10 (ql) - see below G MWP-25 ...
Description Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应
HiRel C-Band GaAs Power-MESFET

File Size 554.40K  /  9 Page

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    MAX3800 MAX3800UGJ MAX3800UHJ

Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
Part No. MAX3800 MAX3800UGJ MAX3800UHJ
OCR Text ... 2.4 2.8 3.2 3.6 4.0 FREQUENCY (GHz) TEMPERATURE (C) DRIVER OUTPUT RETURN LOSS (S22) MAX3800 toc04 40 30 20 GAIN (dB) 10 0 -10 -20 -30 -40 -50 0 MAX3800 toc05 130 120 25 FT 50 JITTER (psp-p) 45 JITTER (psp-p) 110...
Description 640 x 480 pixel format, CCFL Backlight LINE TRANSCEIVER, QFP32
3.2Gbps Adaptive Equalizer and Cable Driver

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    MRW2001 MRW2003

MOTOROLA[Motorola, Inc]
Part No. MRW2001 MRW2003
OCR Text ...lifier stages in the 1.0 to 2.3 GHz frequency range. * Designed for Class B or C, Common Base Power Amplifiers * Specified 28 Volt, 2.0 GHz Characteristics: Output Power -- 1.0 to 20 Watts Power Gain -- 5.2 to 9.0 dB, Min Collector Efficien...
Description MICROWAVE POWER TRANSISTORS

File Size 101.23K  /  6 Page

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    MRW3001 MRW3003 MRW3005

MOTOROLA[Motorola, Inc]
Part No. MRW3001 MRW3003 MRW3005
OCR Text ...lifier stages in the 1.5 to 3.0 GHz frequency range. * Designed for Class B or C, Common Base Linear Power Amplifiers * Specified 28 Volt, 3...2-1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Sy...
Description MICROWAVE POWER TRANSISTORS

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    SE1230Q SE1230Q-EK1

SIGE[SiGe Semiconductor Inc.]
SIGE[SiGe Semiconductor, Inc.]
Part No. SE1230Q SE1230Q-EK1
OCR Text ...ns Wide bandwidth (-3 dB) > 2.0 GHz Maximum input level of 200 mVpk AGC output level of 370 mVpk differential Loss of signal functionality Single-ended or differential operation Minimal external components Operating ambient temperature rang...
Description Development Tools, Light Charger 2.5 Gb/s Automatic Gain Control Amplifier Evaluation kit
LightCharger 2.5 Gb/s Automatic Gain Control Amplifier Final
LightCharger⑩ 2.5 Gb/s Automatic Gain Control Amplifier Final

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    BFU510

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFU510
OCR Text ...* Low feedback capacitance * 45 GHz SiGe process. APPLICATIONS * RF front end * Wideband applications, e.g. analog and digital cellular tele...2 Top view 1 MSB842 BFU510 PINNING PIN 1 2 3 4 emitter base emitter collector DESCRIPTION ha...
Description NPN SiGe wideband transistor

File Size 108.05K  /  16 Page

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