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gsm Datasheet PDF File

For gsm Found Datasheets File :: 6280 Search Time::1ms
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				ADPOW[Advanced Power Technology]
Part No.	APT5024SVR
OCR Text	...TINGS Symbol VDSS ID IDM VGS V gsm PD T J,TSTG TL IAR E AR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5024SVR UNIT Volts Amps 5...
Description	POWER MOS V 500V 22A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	32.19K / 2 Page	View it Online	Download Datasheet

				ETC HP[Agilent(Hewlett-Packard)]
Part No.	ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 DEMO-ATF3X14-33
OCR Text	...ier and Low Noise Amplifier for gsm/TDMA/CDMA Base Stations * LNA for Wireless LAN, WLL/ RLL and MMDS Applications * General Purpose Discrete PHEMT for other Ultra Low Noise Applications 2 ATF-34143 Absolute Maximum Ratings[1] Symbol...
Description	评估板，亚欧信托基金X14300兆赫930-1990兆赫频率 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
File Size	111.58K / 15 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	BA000LBSG BA032LBSG BA028LBSG1 BA029LBSG BA000LBSGSERIES BA030LBSG2-TR
OCR Text	... telephone such as the CDMA and gsm, and for other portable. !Features 1) Internal output transistor (IO=150mA) 2) Internal temperature protection circuit 3) Power-saving function enables designs with low current consumption 4) High leve...
Description	Super-mini package regulator IC Internal output transistor (IO=150mA), Internal temperature protection circuit
File Size	112.18K / 9 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	BA00LBSG
OCR Text	... telephone such as the CDMA and gsm, and for other portable. !Features 1) Internal output transistor (IO=150mA) 2) Internal temperature protection circuit 3) Power-saving function enables designs with low current consumption 4) High leve...
Description	Super-mini package regulator IC
File Size	111.52K / 9 Page	View it Online	Download Datasheet

				MA-Com MACOM[Tyco Electronics]
Part No.	MASWSS0020 MASWSS0020SMB MASWSS0020TR
OCR Text	...d. Typical applications are for gsm and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well as other handset and related applications. This part can be used in all systems operating up to 3 ...
Description	DC-3 GHz, GaAs SP4T 2.5V high power switch GaAs SP4T 2.5V High Power Switch DC - 3 GHz ER 9C 6#16 3#12 SKT RECP ER 9C 6#16 3#12 PIN RECP 砷化镓SP4T 2.5V的大功率开关直 3千兆
File Size	258.42K / 5 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18030A MRF18030ALR3 MRF18030ALSR3
OCR Text	...ETs MRF18030ALSR3 Designed for gsm and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for gsm 1805 - 1880 MHz. * Typical gsm Performance: ...
Description	SEE A3282EUA-T CHOPPER STABILIZED LATCH W/TIN PLATING SEE A3282ELHLT-T RF Power Field Effect Transistors
File Size	504.66K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text	...r gsm1805 - 1880 MHz. * Typical gsm Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts Efficiency -- 45% (Typ) @ 60 Watts * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency ...
Description	MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
File Size	399.98K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text	...ified for gsm1930 - 1990 MHz. * gsm Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts CW Efficiency -- 45% (Typ) @ 60 Watts CW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Effic...
Description	HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
File Size	486.59K / 8 Page	View it Online	Download Datasheet

For gsm Found Datasheets File :: 6280 Search Time::1ms
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