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				HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc. Analog Devices, Inc. Panasonic Industrial Solutions
Part No.	HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI HY62VT08081E-DPC HY62VT08081E-DPE HY62VT08081E-DPI HY62VT08081E-DTC HY62VT08081E-DTE HY62VT08081E-DTI HY62UT0808 HY62KT08081E-DTI HY62KT08081E HY62KT08081E-DGC HY62KT08081E-DGE HY62KT08081E-DGI HY62KT08081E-DPC HY62KT08081E-DPE HY62KT08081E-DPI HY62KT08081E-DTC HY62KT08081E-DTE HY62UT08081E-DGC HY62UT08081E-DGE HY62UT08081E-DGI HY62UT08081E-DPC HY62UT08081E-DPE HY62UT08081E-DPI HY62UT08081E-DTC HY62UT08081E-DTE HY62UT08081E-DTI HY62KT08081E-DT70E HY62KT08081E-DT10E HY62KT08081E-DT10C HY62KT08081E-DT70C HY62KT08081E-DT10I HY62KT08081E-DP10I HY62KT08081E-DP10E HY62KT08081E-DG70C HY62KT08081E-DG70E HY62KT08081E-DG10E HY62KT08081E-DG10C HY62KT08081E-DP10C HY62KT08081E-DG10I HY62VT08081E-DG10E HY62VT08081E-DP10E HY62KT08081E-DG70I HY62UT08081E-DT10I HY62UT08081E-DT10C HY62VT08081E-DT10E HY62VT08081E-DT10I HY62VT08081E-DT10C HY62VT08081E-DT85C HY62KT08081E-DT85C HY62UT08081E-DT85C HY62UT08081E-DG10I HY62UT08081E-DP10I HY62UT08081E-DP10C HY62UT08081E-DG10C HY62UT08081E-DT70I HY62UT08081E-DP70C HY62UT08081E-DT85I HY62UT08081E-DT70C HY62VT08081E-DT70I HY62VT08081E-DP85C HY62KT08081E-DG85I HY62UT08081E
OCR Text	...er consumption Battery backup(L/LL-part) - 2.0V(min.) data retention * Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(uA) LL-Part 5 8 8 5 8 8 5 8 8 Temperature (C) 0~...
Description	Low Power Slow SRAM - 256Kb SWITCH, REED SPST-NO 10W SMD QSW-REED,10MM,10W,SMD 9 POS FR-4 SIP SOCKET x8\|3V\|70/85/100\|Low Power Slow SRAM - 256K x8\|3.3V\|70/85/100\|Low Power Slow SRAM - 256K 32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM x8 SRAM x8的SRAM x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
File Size	190.56K / 12 Page	View it Online	Download Datasheet

				IDT[Integrated Device Technology]
Part No.	IDT5V9950 IDT5V9950PFI
OCR Text	...individual banks when nF[1:0] = LL. Set sOE LOW for normal operation (has internal pull-down). Selectable positive or negative edge control....Type XX Package X Package I -40C to +85C (Industrial) PF Thin Quad Flat Pack 5V9950 ...
Description	3.3V PROGRAMMABLE SKEW PLL CLOCK DRIVER TURBOCLOCK? II JR.
File Size	65.38K / 9 Page	View it Online	Download Datasheet

				IDT[Integrated Device Technology]
Part No.	IDT5V9955 IDT5V9955BFI IDT5V9955BFI8
OCR Text	...ndividual banks when xnF[1:0] = LL. Set xsOE LOW for normal operation (has internal pull-down). Individual Selectable positive or negative e...Type XX Package X Package I BF -40C to +85C (Industrial) Fine Pitch Ball Grid Array 5V9955 ...
Description	3.3V Programmable Skew Dual PLL Clock Driver Turboclock II 3.3V PROGRAMMABLE SKEW DUAL PLL CLOCK DRIVER TURBOCLOCK W
File Size	124.58K / 11 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRLW530A IRLWI530A IRLI530A IRLW530ATM
OCR Text	...ing Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD B...Type as DUT VGS VDD dv/dt controlled by RG IS controlled by Duty Factor D VGS ( Driver )...
Description	100V N-Channel Logic Level A-FET ADVANCED POWER MOSFET
File Size	271.41K / 9 Page	View it Online	Download Datasheet

				http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Nihon Dempa Kogyo Co., Ltd. Samsung Semiconductor Co., Ltd.
Part No.	K6T4008U1C-VF10 K6T4008V1C K6T4008U1C-MF10 K6T4008U1C-YB70 K6T4008U1C-YF10 K6T4008V1C-VF70 K6T4008V1C-GF70 K6T4008V1C-YF70 K6T4008U1C-VB70 K6T4008V1C-MF70 K6T4008V1C-YB70 K6T4008V1C-YF85 K6T4008U1C-B K6T4008U1C-F K6T4008U1C-GB10 K6T4008U1C-GB70 K6T4008U1C-GB85 K6T4008U1C-GF10 K6T4008U1C-GF70 K6T4008U1C-GF85 K6T4008U1C-MB10 K6T4008U1C-MB70 K6T4008U1C-MB85 K6T4008U1C-MF70 K6T4008U1C-MF85 K6T4008U1C-TB10 K6T4008U1C-TB70 K6T4008U1C-TB85 K6T4008U1C-TF10 K6T4008U1C-TF70 K6T4008U1C-TF85 K6T4008U1C-VB10 K6T4008U1C-VB85 K6T4008U1C-VF70 K6T4008U1C-VF85 K6T4008U1C-YB10 K6T4008U1C-YB85 K6T4008U1C-YF70 K6T4008U1C-YF85 K6T4008V1C-B K6T4008V1C-F K6T4008V1C-GB70 K6T4008V1C-GB85 K6T4008V1C-GF85 K6T4008V1C-MB70 K6T4008V1C-MB85 K6T4008V1C-MF85 K6T4008V1C-TB70 K6T4008V1C-TB85 K6T4008V1C-TF70 K6T4008V1C-TF85 K6T4008V1C-VB70 K6T4008V1C-VB85 K6T4008V1C-VF85 K6T4008V1C-YB85
OCR Text	...10 Function 32-SOP, 70ns, 3.3V, LL 32-SOP, 85ns, 3.3V, LL 32-TSOP2-F, 70ns, 3.3V, LL 32-TSOP2-F, 85ns, 3.3V, LL 32-TSOP2-R, 70ns, 3.3V, LL 3...TYPE I (0820F) CMOS SRAM Units: millimeters(inches) 0.20 +0.10 -0.05 +0.004 0.008 -0.002 ...
Description	POT 250K OHM 3/8 SQ CERM SL ST POT 25K OHM 3/8 SQ CERM SL ST 512Kx8 bit Low Power and Low Voltage CMOS Static RAM 512Kx8位低功耗和低电压的CMOS静态RAM
File Size	185.50K / 10 Page	View it Online	Download Datasheet

				http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL-W M5M5V208FP-12L-W M5M5V208FP-70LL-W M5M5V208FP-70L-W M5M5V208FP-85LL-W M5M5V208FP-85L-W M5M5V208KR-10LL-W M5M5V208KR-10L-W M5M5V208KR-12LL-W M5M5V208KR-12L-W M5M5V208KR-70LL-W M5M5V208KR-70L-W M5M5V208KR-85LL-W M5M5V208KR-85L-W M5M5V208KV-10LL-W M5M5V208KV-10L-W M5M5V208KV-12LL-W M5M5V208KV-12L-W M5M5V208KV-70LL-W M5M5V208KV-70L-W M5M5V208KV-85LL-W M5M5V208KV-85L-W M5M5V208RV-10LL-W M5M5V208RV-10L-W M5M5V208RV-12LL-W M5M5V208RV-12L-W M5M5V208RV-70LL-W M5M5V208RV-70L-W M5M5V208RV-85LL-W M5M5V208RV-85L-W M5M5V208VP-10LL-W M5M5V208VP-10L-W M5M5V208VP-12LL-W M5M5V208VP-12L-W M5M5V208VP-70LL-W M5M5V208VP-70L-W M5M5V208VP-85LL-W M5M5V208VP-85L-W M5V208W M5M5V208FP-85-W M5M5V208KR-85-W M5M5V208RV-85-W M5M5V208VP-85-W M5M5V208KV-85-W
OCR Text	... 2) S1 Vcc-0.2V, S2 Vcc-0.2V -LL -20 ~ +40C other inputs=0 ~ Vcc +25C A 0.3 0.6 0.33 mA Icc4 Stand-by current S1=VIH or S2=VIL,other inputs=0 ~ Vcc * -3.0V in case of AC ( Pulse width 30ns ) CAPACITANCE Symbol CI...
Description	From old datasheet system Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
File Size	87.80K / 7 Page	View it Online	Download Datasheet

				http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	M5M5V208FP-10L M5M5V208FP-10LL M5M5V208FP-12L M5M5V208FP-12LL M5M5V208FP-70L M5M5V208FP-70LL M5M5V208FP-85L M5M5V208FP-85LL M5M5V208KR-10L M5M5V208KR-10LL M5M5V208KR-12L M5M5V208KR-12LL M5M5V208KR-70L M5M5V208KR-70LL M5M5V208KR-85L M5M5V208KR-85LL M5M5V208KV-10L M5M5V208KV-10LL M5M5V208KV-12L M5M5V208KV-12LL M5M5V208KV-70L M5M5V208KV-70LL M5M5V208KV-85L M5M5V208KV-85LL M5M5V208RV-10L M5M5V208RV-10LL M5M5V208RV-12L M5M5V208RV-12LL M5M5V208RV-70L M5M5V208RV-70LL M5M5V208RV-85L M5M5V208RV-85LL M5M5V208VP-10L M5M5V208VP-10LL M5M5V208VP-12L M5M5V208VP-12LL M5M5V208VP-70L M5M5V208VP-70LL M5M5V208VP-85L M5M5V208VP-85LL M5V208S
OCR Text	... 2) S1 Vcc-0.2V, S2 Vcc-0.2V -LL -20 ~ +40C other inputs=0 ~ Vcc +25C A 0.3 0.6 0.33 mA Icc4 Stand-by current S1=VIH or S2=VIL,other inputs=0 ~ Vcc * -3.0V in case of AC ( Pulse width 30ns ) CAPACITANCE Symbol CI...
Description	From old datasheet system 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
File Size	75.19K / 7 Page	View it Online	Download Datasheet

				NTE[NTE Electronics] NTE Electronics, Inc.
Part No.	NTE1V300 NTE524V48 NTE524V13 NTE524V15 NTEV480 NTE1V010 NTE1V014 NTE1V015 NTE1V020 NTE1V025 NTE1V030 NTE1V035 NTE1V040 NTE1V050 NTE1V060 NTE1V075 NTE1V095 NTE1V115 NTE1V130 NTE1V150 NTE1V175 NTE1V250 NTE1V275 NTE2V010 NTE2V014 NTE2V015 NTE2V017 NTE2V020 NTE2V025 NTE2V030 NTE2V035 NTE2V040 NTE2V050 NTE2V060 NTE2V075 NTE2V095 NTE2V115 NTE2V130 NTE2V150 NTE2V250 NTE2V275 NTE524V17 NTE524V25 NTE524V27 NTE1V017 NTEELECTRONICSINC.-NTE1V300 2V030 1V010 1V014 1V015 1V017 1V025 1V020 1V030 1V040 1V050 1V060 1V095 1V075 1V035 1V115 1V130 1V150 1V250 1V275 1V300 1V175 2V014 2V017 2V020 2V040 2V035 2V025 2V015 2V010 2V480 524V48 2V060 2V300 524V30 2V150 524V15 2V130 524V13 524V17 2V115 2V095 524V27 524V25
OCR Text	... + 0.1F - 150F LS D LL LD L D 1V Series H .235 (6.0) L LL LS LD .345 (9.0) .475 1.000 .200 .024 (12.0) (25.4) (5.08) (0.6) .787 1.000 .315 (20.0) (25.4) (8.0) .031 (0.8) H 2V Series .699 .275 (17.8) (7.0) 524V Seri...
Description	Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 390 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 150 V @ 1mA DC test current. Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 270 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 216 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 240 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 470 V @ 1mA DC test current. Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 750 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 18 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 24 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 39 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 56 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 68 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 33 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 27 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 22 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 270 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 470 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 430 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 390 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 240 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 216 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 171 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 56 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 120 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 150 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 100 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 82 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 68 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 47 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 33 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 39 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 27 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 24 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 22 V @ 1mA DC test current. Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 18 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 47 V @ 1mA DC test current. Metal Oxide Varistors (MOV) 金属氧化物压敏电阻（MOV）的 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 750 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 100 V @ 1mA DC test current. Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 470 V @ 1mA DC test current. Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 240 V @ 1mA DC test current. Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 216 V @ 1mA DC test current. Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 171 V @ 1mA DC test current. Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 430 V @ 1mA DC test current.
File Size	26.95K / 3 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	SFW12955 SFW2955
OCR Text	...ing Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD tp ID VDD Time VDS (t) RG DUT -10V tp C VDD ID (t) IAS BVDSS SFW/I2955 P-CH...
Description	Advenced Power MOSFET 9.4 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB Advanced Power MOSFET
File Size	247.15K / 7 Page	View it Online	Download Datasheet

				ZMD List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
Part No.	U6264A U6264ADC07 U6264ADC07L U6264ADC07LL U6264ADG07L U6264ADG07LL U6264ADG10LL U6264ADK07 U6264ADK10LL U6264AS1C07L U6264AS1C10 U6264AS1C10LL U6264AS1G07L U6264AS1G10 U6264AS1K07L U6264AS1K10 U6264ASC07 U6264ASC07LL U6264ASC10LL U6264ASG07 U6264ASG10 U6264AS1G10L U6264AS1G10LL U6264AS1K07LL U6264ASC10 U6264ASG07LL U6264AS1G07 U6264AS1G07LL U6264AS1C10L U6264AS1K10L U6264ADC10 U6264ADC10L U6264ADC10LL U6264AS1C07 U6264AS1C07LL U6264AS1K07 U6264AS1K10LL U6264ASC07L U6264ASC10L U6264ASG07L U6264ADG07 U6264ADG10 U6264ADG10L U6264ADK07L U6264ADK07LL U6264ADK10 U6264ADK10L U6264ASK10LL U6264ASG10L U6264ASG10LL U6264ASK07 U6264ASK07L U6264ASK07LL U6264ASK10 U6264ASK10L
OCR Text	...Standby current very low power (LL) < 1 A Standby current for LL-version at 25 C and 5 V: typ. 50 nA TTL/CMOS-compatible Automatic reduction...Type G-Type K-Type Symbol V CC VI VO PD Ta Min. -0.3 -0.3 -0.3 0 -25 -40 -55 Max. 7 VCC + 0...
Description	STANDARD 8K X 8 SRAM 标准8K的8的SRAM 2.7V, Low-Power, 8-Channel, Serial 12-Bit ADCs 标准8K的8的SRAM
File Size	176.36K / 9 Page	View it Online	Download Datasheet

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