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  medium power tmos fet 250 ma 2 Datasheet PDF File

For medium power tmos fet 250 ma 2 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MTV10N100E_D ON2669 MTV10N100E-D

ON Semiconductor
Part No. MTV10N100E_D ON2669 MTV10N100E-D
Description tmos E-fet power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos power fet 10 AMPERES 1000 VOLTS

File Size 268.98K  /  10 Page

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    MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D
Description tmos power fet 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM tmos14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆
tmos power fet 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, power, MOSfet, TO-264AA
From old datasheet system
tmos E-fet power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate

File Size 232.49K  /  8 Page

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    IRF540_D ON0285 IRF540/D IRF540-D IRF540

Motorola, Inc.
ON Semiconductor
Part No. IRF540_D ON0285 IRF540/D IRF540-D IRF540
Description 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, power, MOSfet, TO-220AB
100V7A tmos power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A tmos功率场效应管(N沟道增强型硅门))
From old datasheet system
tmos power fet 27 AMPERES
tmos E-fet power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 139.23K  /  6 Page

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    MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G

ONSEMI[ON Semiconductor]
Part No. MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G
Description tmos power fet
tmos E-fet power Field Effect Transistor DPAK for Surface Mount

File Size 93.40K  /  8 Page

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    MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D
Description tmos E-fet power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power fet 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system

File Size 252.63K  /  10 Page

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    MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D
Description tmos E-fet power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power fet 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM
From old datasheet system

File Size 266.21K  /  10 Page

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    MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D
Description tmos E-fet power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
tmos power fet 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
From old datasheet system

File Size 262.08K  /  10 Page

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    MTB10N40E MTB10N40E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB10N40E MTB10N40E-D
Description tmos E-fet High Energy power fet D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power fet 10 AMPERES

File Size 272.75K  /  10 Page

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    MTB9N25E MTB9N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB9N25E MTB9N25E-D
Description tmos E-fet High Energy power fet D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power fet 9.0 AMPERES 250 VOLTS

File Size 258.36K  /  10 Page

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    MTB2N40E MTB2N40E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB2N40E MTB2N40E-D
Description tmos E-fet High Energy power fet D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power fet 2.0 AMPERES 400 VOLTS

File Size 270.98K  /  10 Page

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