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moulding Datasheet PDF File

For moulding Found Datasheets File :: 308 Search Time::11.61ms
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				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFIZ46N
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=55V Rds(on)=0.020ohm Id=33A) Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=33A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.020ohm，身份证\u003d 33A条）
File Size	101.04K / 8 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	HT1DC20S30 HT1DC20S30_2
OCR Text	...ponder is sealed in epoxy resin moulding compound. The designation of the package is SOT385-1 (see Chapter "Package outline"). PARAMETER Mechanical dimensions Protection class Casting material Transponder IC type 12 x 6 x 3 mm IP67 epoxy re...
Description	From old datasheet system HITAG 1 stick transponder
File Size	51.24K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFI9610G
OCR Text	...ialindustrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	HEXFET POWER MOSFET
File Size	167.03K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	LIS2L02AS4 E-LIS2L02AS4TR E-LIS2L02AS4
OCR Text	...ing the moving parts during the moulding phase of the plastic encapsulation. When an acceleration is applied to the sensor the proof mass displaces from its nominal position, causing an imbalance in the capacitive half-bridge. This imbalanc...
Description	MEMS INERTIAL SENSOR: 2-Axis - ±2g/±6g LINEAR ACCELEROMETER MEMS INERTIAL SENSOR: 2-Axis - 【2g/【6g LINEAR ACCELEROMETER MEMS INERTIAL SENSOR: 2-Axis - ??g/??g LINEAR ACCELEROMETER
File Size	149.70K / 14 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLI540NPBF
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	HEXFET Power MOSFET
File Size	252.73K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFI540NPBF
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	HEXFET Power MOSFET
File Size	256.19K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFIZ34EPBF
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	HEXFET Power MOSFET
File Size	259.50K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLI3615PBF
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	HEXFET Power MOSFET
File Size	162.87K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLI630G
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)
File Size	294.57K / 8 Page	View it Online	Download Datasheet

For moulding Found Datasheets File :: 308 Search Time::11.61ms
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