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  n channel trench mos field Datasheet PDF File

For n channel trench mos field Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Microsemi, Corp.
Part No. APTGT50H60T3G
Description Full - Bridge Trench field Stop IGBT Power Module 80 A, 600 V, n-CHAnnEL IGBT

File Size 261.43K  /  5 Page

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    Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. APTGT20H60T3G
Description Full - Bridge Trench field Stop IGBT Power Module 32 A, 600 V, n-CHAnnEL IGBT

File Size 261.10K  /  5 Page

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    STP4931

Stanson Technology
Part No. STP4931
Description STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, Dmos trench technology.

File Size 328.89K  /  6 Page

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    STP4925

Stanson Technology
Part No. STP4925
Description STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, Dmos trench technology.

File Size 569.13K  /  6 Page

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    STN9926

Stanson Technology
Part No. STn9926
Description The STn9926 is the Dual n-Channel logic enhancement mode power field effect transistors are produced using high cell density , Dmos trench technology.

File Size 642.32K  /  7 Page

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    STN9926AA

Stanson Technology
Part No. STn9926AA
Description The STn9926AA is the Dual n-Channel logic enhancement mode power field effect transistors are produced using high cell density , Dmos trench technology.

File Size 224.98K  /  7 Page

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    STN4822

Stanson Technology
Part No. STn4822
Description STn4822 is the Dual n-Channel logic enhancement mode power field effect transistors which are produced using high cell density Dmos trench technology.

File Size 510.78K  /  6 Page

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    Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. APTGT200SK60TG
Description Buck chopper Trench field Stop IGBT Power Module 290 A, 600 V, n-CHAnnEL IGBT

File Size 255.91K  /  6 Page

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    MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Part No. APTGT225A170
Description 340 A, 1700 V, n-CHAnnEL IGBT
Phase leg Trench field Stop IGBT Power Module

File Size 266.30K  /  5 Page

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    Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. APTGT100DH60TG
Description Asymmetrical - Bridge Trench field Stop IGBT Power Module 150 A, 600 V, n-CHAnnEL IGBT

File Size 255.67K  /  5 Page

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