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n-cdma w-cdma Datasheet PDF File

For n-cdma w-cdma Found Datasheets File :: 1725 Search Time::2.047ms
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				RF Micro Devices
Part No.	RF9906
OCR Text	...utput VSWR 8-114 S T O N ee U de d 1.5 <1.5:1 -8 16 23 <1.5:1 pg ra 44 9 dBm dB dB dB dBm dB dB dBm dB dB 8 ...CDMA Mode, IF SEL.=2.9V, 1k balanced load, 2.5dB Image Filter Loss. 46 1 Rev C5 000822 Data...
Description	CDMA / FM Low Noise Amplifier / Mixer
File Size	258.25K / 8 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF6S27085HR3 MRF6S27085HSR3
OCR Text	N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WL...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	388.87K / 11 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	AGR26125E AGR26125EF AGR26125EU
OCR Text	n-channel e-mode, lateral mosfet introduction the agr26125e is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal ox...cdma test model 1. this test signal provides an equivalent reference (occupied bandwidth and wavefor...
Description	125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET
File Size	340.97K / 9 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF8HP21130HR3 MRF8HP21130HSR3
OCR Text	n--channel enhancement--mode lateral mosfets designed for w--cdma and lte base station applications with frequencies from 2110 to 2170 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typi...
Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
File Size	560.55K / 14 Page	View it Online	Download Datasheet

				Freescale Semiconductor
Part No.	MD7IC18120GNR1 MD7IC18120NR1
OCR Text	...3 inch Reel. VDS1A VGS2A VGS1A N.C. VDS1A VGS2A VGS1A N.C. RFinA N.C. N.C. RFinB N.C. VGS1B VGS2B VDS1B N.C. 1 2 3 4 5 6 7 8 9 10 11 12 13 ...CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain Power...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	638.72K / 18 Page	View it Online	Download Datasheet

				Panasonic
Part No.	AN6080FHN
OCR Text	...2 3 4 ix in b.b v cc q in qx in n.c. pa gnd gca gnd if out 1/2 /2 gca ctrl gca an6080fhn 2 sdm00001beb pin descriptions absolute maximum ratings parameter symbol rating unit supply voltage v cc 4.2 v supply current i cc 40 ma power dis...
Description	For InformationCommunication - Cellular Phone
File Size	173.56K / 10 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF5S19100HSR3 MRF5S19100HR3
OCR Text	N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. * Typical 2 - Carrier N - CDMA Perfo...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	575.97K / 12 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MRF19030 MRF19030R3 MRF19030SR3
OCR Text	...Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier application...
Description	RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	386.08K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF19060 MRF19060R3 MRF19060SR3
OCR Text	...Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. * Typ...
Description	RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	382.95K / 8 Page	View it Online	Download Datasheet

				EPCOS AG
Part No.	B7633
OCR Text	...duplexer data sheet application n low-loss rf duplexer for mobile telephone is-95 cdma systems features n package size 5.0 x 5.0 x 1.35 mm 3 n package code qcs12e n rohs compatible n approximate weight 0.08 g n package for s urface m ount ...
Description	SAW Components BAW duplexer 1880.00 / 1960.00 MHz
File Size	183.86K / 12 Page	View it Online	Download Datasheet

For n-cdma w-cdma Found Datasheets File :: 1725 Search Time::2.047ms
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