Description |
C BANd, 3.9 pF, silicon, ABRUPT VARIABLE CAPACITANCE dIOdE C BANd, 0.8 pF, silicon, hyperabrupt VARIABLE CAPACITANCE dIOdE C BANd, 0.8 pF, silicon, ABRUPT VARIABLE CAPACITANCE dIOdE ENHANCEd PERFORMANCE SURFACE MOUNT EPSM垄芒hyperabrupt varactor diodes TM ENHANCEd PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt varactor diodes TM ENHANCEd PERFORMANCE SURFACE MOUNT EPSM?hyperabrupt varactor diodes TM C BANd, 16.5 pF, silicon, hyperabrupt VARIABLE CAPACITANCE dIOdE C BANd, 1.5 pF, silicon, hyperabrupt VARIABLE CAPACITANCE dIOdE
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