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  transistor leistungs bipolar Datasheet PDF File

For transistor leistungs bipolar Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    IRG4BC29K IRG4BC30K IRG4BC30

IRF[International Rectifier]
Part No. IRG4BC29K IRG4BC30K IRG4BC30
Description 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE bipolar transistor(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

File Size 135.84K  /  8 Page

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    IRG4PH40K

IRF[International Rectifier]
Part No. IRG4PH40K
Description 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE bipolar transistor(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 154.31K  /  8 Page

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    BUL146FG BUL146G

ON Semiconductor
Part No. BUL146FG BUL146G
Description bipolar Power TO220FP NPN 6A 400V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 6 A, 400 V, NPN, Si, POWER transistor, TO-220AB
SWITCHMODE NPN bipolar Power transistor

File Size 218.29K  /  11 Page

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    AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-31033-BLK AT-31033-TR1

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-31033-BLK AT-31033-TR1
Description TERM BLOCK HDR 5.08MM 3POS PCB
Low Current/ High Performance NPN Silicon bipolar transistor
Low Current High Performance NPN Silicon bipolar transistor
Low Current, High Performance NPN Silicon bipolar transistor

File Size 121.09K  /  10 Page

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    2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD

UTC
ROHM[Rohm]
Part No. 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD2114K1 2SD26721 2SK20941 2SK25031 2SK25041 2SK27151 2SK30181 2SK30191 2SK30501 2SK35411 4N60-TA3-T 4N60-TF3-T 4N60L-TA3-T
Description -3A / -12V bipolar transistor
-2A / -30V bipolar transistor
High-gain Amplifier transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier transistor (120V, 50mA)
High-Frequency Amplifier transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier transistor (32V , 0.3A)
Medium Power transistor (32V, 1A)
Power transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET

File Size 93.04K  /  3 Page

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    CT30SM-12 CT30SM-1

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CT30SM-12 CT30SM-1
Description MITSUBISHI INSULATED GATE bipolar transistor GENERAL INVERTER UPS USE
Integrated Gate bipolar transistor (IGBT) Modules: 250V
GENERAL INVERTER . UPS USE

File Size 35.85K  /  3 Page

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    IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15

International Rectifier
Part No. IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15
Description INSULATED GATE bipolar transistor
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
   INSULATED GATE bipolar transistor

File Size 647.10K  /  10 Page

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    CZT3055 CZT3055NPN CZT2955PNP CZT2955 CZT305

CENTRAL[Central Semiconductor Corp]
Part No. CZT3055 CZT3055NPN CZT2955PNP CZT2955 CZT305
Description SMD bipolar Power transistor NPN General Purpose Amplifier/Switch
SMD bipolar Power transistor PNP General Purpose Amplifier/Switch
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER transistor

File Size 72.36K  /  2 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. GT40G121
Description Insulated Gate bipolar transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate bipolar transistor Silicon N Channel IGBT

File Size 139.45K  /  5 Page

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    ONSEMI[ON Semiconductor]
Part No. MGW12N120
Description Insulated Gate bipolar transistor N-Channel
Insulated Gate bipolar transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE

File Size 133.06K  /  5 Page

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