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TOSHIBA
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| Part No. |
TC55VD818FF-133 TC55VD818FF-143 TC55VD818FF-150
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| OCR Text |
...8-word by 18-bit synchronous no-turnaround static ram description the tc55vd818ff is a synchronous static random access memory (sram) organized as 524,288 words by 18 bits. ntram tm (no-turnaround sram) offers high bandwidth by eliminat... |
| Description |
524,288-WORD BY 18-BIT SYNCHRONOUS NO-turnaround STATIC RAM
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| File Size |
570.47K /
21 Page |
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it Online |
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TOSHIBA
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| Part No. |
TC55VD836FF-133 TC55VD836FF-143
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| OCR Text |
...4-word by 36-bit synchronous no-turnaround static ram description the tc55vd836ff is a synchronous static random access memory (sram) organized as 262,144 words by 36 bits. ntram tm (no-turnaround sram) offers high bandwidth by eliminat... |
| Description |
262,144-WORD BY 32-BIT SYNCHRONOUS NO-turnaround STATIC RAM
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| File Size |
571.60K /
21 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F
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| OCR Text |
...cription the micron ? zero bus turnaround ? (zbt ? ) sram family employs high-speed, low-power cmos designs using an advanced cmos process. micron?s 16mb zbt srams integrate a 1 meg x 18, 512k x 32, or 512k x 36 sram core with advanced sy... |
| Description |
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36锛?low-Through ZBT SRAM(16Mb娴??寮??姝ラ?????ㄥ?)
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| File Size |
513.55K /
32 Page |
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Samsung Electronic
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| Part No. |
K7N167245A
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| OCR Text |
...c srams. the n t ram tm , or no turnaround random access memory uti- lizes all the bandwidth in any combination of operating cycles. address, data inputs, and all control signals except output enable and linear burst order are synchronized ... |
| Description |
256Kx72-Bit Pipelined NtRAMData Sheet
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| File Size |
473.86K /
20 Page |
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it Online |
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http://
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K7N803601B K7N803649B-QC25 DS_K7N803601B K7M801825B-QC65 K7M801825B-QC75 K7M803625B-QC65 K7M803625B-QC75 K7N801801B K7N801801B-QC13 K7N801801B-QC16 K7N801809B-QC25 K7N801845B-QC13 K7N801845B-QC16 K7N801849B-QC25 K7N803601B-QC13 K7N803601B-QC16 K7N803609B-QC25 K7N803645B-QC13 K7N803645B-QC16 K7N803609B DSK7N803601B K7N801801B-QC16_13 K7N801845B K7N803645B K7M801825B-QC65/75 K7N161801A-QFCI13 K7N801801B-QC16/13 K7N803601B-QC16/13 K7M803625B-QC65/75 K7N801845B-QC16/13 K7N803645B-QC16/13
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| OCR Text |
...tatic SRAMs. The NtRAMTM, or No turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to... |
| Description |
512Kx36 & 1Mx18 Pipelined NtRAM
256Kx36 & 512Kx18-Bit Flow Through NtRAM
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes
256Kx36 & 512Kx18-Bit Pipelined NtRAM 256Kx36
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| File Size |
376.04K /
18 Page |
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it Online |
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Price and Availability
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