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  w barrier Datasheet PDF File

For w barrier Found Datasheets File :: 13208    Search Time::1.578ms    
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    SB065C040-3-W-AG

TRANSYS Electronics Limited
Part No. SB065C040-3-w-AG
OCR Text w-Ag Schottky cr barrier Diode wafer 65 Mils, 40 Volt, 3 Amp, 0.39VF. Data Sheet Features Oxide Passivated Junction Very Low Forward Voltage 125 C Junction Operating Low Reverse Leakage Supplied as wafers Chromium barrier >1000V ESD ...
Description Schottky cr barrier Diode wafer 65 Mils, 40 Volt, 3 Amp, 0.39VF.

File Size 152.07K  /  1 Page

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    SB065C040-3-W-AG

TRANSYS Electronics Limited
Part No. SB065C040-3-w-AG
OCR Text w-Ag Schottky cr barrier Diode wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF. Data Sheet Features Oxide Passivated Junction Very Low Forward Voltage 125 C Junction Operating Low Reverse Leakage Supplied as wafers Chromium barrier >1000V ESD ...
Description Schottky cr barrier Diode wafer

File Size 151.77K  /  1 Page

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    FM145L-W-S-R01

Rectron Semiconductor
Part No. FM145L-w-S-R01
OCR Text ...C IO IFSM RJA CJ TJ TSTG FM145L-w-S-R01 45 31.5 45 1.0 40 50 110 -65 to + 125 -65 to + 150 UNITS Volts Volts Volts Amps Amps 0 C/ w pF 0 0 C C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maxim...
Description SURFACE MOUNT SCHOTTKY barrier RECTIFIER VOLTAGE 45 Volts CURRENT 1.0 Ampere

File Size 63.54K  /  3 Page

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    NSR0520V2T1G

ON Semiconductor
Part No. NSR0520V2T1G
OCR Text ... 170 300 340 -55 to +125 Unit C/w mw C/w mw C 1. Mounted onto a 4 in square FR-4 board 10 mm sq. 1 oz. Cu 0.06" thick single-sided. Operating to steady state. 2. Mounted onto a 4 in square FR-4 board 1 in sq. 1 oz. Cu 0.06" thick single-...
Description Schottky barrier Diode

File Size 104.17K  /  4 Page

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    CDBMH320-G CDBMH330-G CDBMH380-G CDBMH3100-G CDBMH340-G

Comchip Technology
Part No. CDBMH320-G CDBMH330-G CDBMH380-G CDBMH3100-G CDBMH340-G
OCR Text ... 56 100 100 70 v v v a v a ma c/w c 0.50 0.85 note : operating temperature storage temperature range t stg -65 to +175 c -55 to +125 -55 to...barrier rectifiers f=1mhz applied 4vdc reverse voltage t j =25c pulse width 300us 1% duty cycle 0 ....
Description SMD Schottky barrier Rectifiers

File Size 91.11K  /  4 Page

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    CDBF0320-HF CDBF0330-HF CDBF0340-HF

Comchip Technology
Part No. CDBF0320-HF CDBF0330-HF CDBF0340-HF
OCR Text ...Unit 40 28 V V mA A mw O C/w O TSTG Tj O C C O Electrical Characteristics (at TA=25 C unless otherwise noted) Parameter ...barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBF0320/0330/0340-HF) Fi...
Description SMD Schottky barrier Diode

File Size 188.86K  /  4 Page

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    BOURNS[Bourns Electronic Solutions]
Part No. CD1607-B120 CD1607-B140LLF CD1607-B120L CD1607-B120LLF CD1607-B140L
OCR Text ...0 28 40 40 28 V V V A A C/w C C ** Thermal resistance junction to lead. * Condition: 8.3 ms single half sine-wave superimposed on r...barrier Series Average Forward Current (Io) Code 1 = 1 A (Code x 1000 mA = Average Forward Current) ...
Description Schottky barrier Rectifier Chip Diode

File Size 280.14K  /  5 Page

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    PMEG4010CEH PMEG4010CEJ PMEG4010CEH115

NXP Semiconductors N.V.
Part No. PMEG4010CEH PMEG4010CEJ PMEG4010CEH115
OCR Text ... - - 330 150 350 150 K/w K/w K/w K/w - - 60 55 K/w K/w For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power l...
Description 1 A very low VF MEGA Schottky barrier rectifiers; Package: SOD123F (SOD2); Container: Tape reel smd 1 A, SILICON, SIGNAL DIODE

File Size 91.25K  /  10 Page

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    MBR0540T1 MBR0540T1_D ON0407

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MBR0540T1 MBR0540T1_D ON0407
OCR Text ...Ambient (3) Rtjl Rtja 118 206 C/w ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1) (IF = 0.5 A) (IF = 1 A) Maximum Instantaneous Reverse Current (VR = 40 V) (VR = 20 V) (1) Pulse Test: Pulse width 250 s, Duty Cycle ...
Description From old datasheet system
SCHOTTKY barrier RECTIFIER 0.5 AMPERES 40 VOLTS

File Size 130.10K  /  4 Page

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    RJK0216DPA

Renesas Electronics Corporation
Part No. RJK0216DPA
OCR Text ...issipation pch note3 10 20 w channel temperature tch 150 150 c storage temperature tstg ?55 to +150 ?55 to +150 c notes: 1...barrier diode forward voltage v f ? 0.39 ? v if = 2 a, v gs = 0 note4 body?drain diode re...
Description Silicon N Channel Power MOS FET with Schottky barrier Diode High Speed Power Switching

File Size 250.89K  /  11 Page

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For w barrier Found Datasheets File :: 13208    Search Time::1.578ms    
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