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MC145181 15651 01110 3LP01SS P507A 200BF D40E1 SINGLE
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    2SJ557 2SJ557-T2B 2SJ557-T1B

NEC[NEC]
Part No. 2SJ557 2SJ557-T2B 2SJ557-T1B
OCR Text ...e Mounted on FR-4 Board of 50mm x 50mm x 1.6mm 0 30 60 90 120 TA - Ambient Temperature - C 150 -0.01 -0.1 -1 -10 -100 ...Cut-off Voltage - V -10 -1 ID - Drain Current - A VDS = -10 V GATE TO SOURCE CUT-OFF VOLTA...
Description Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 60.99K  /  8 Page

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    2SJ559 2SJ559-T1

NEC[NEC]
Part No. 2SJ559 2SJ559-T1
OCR Text ...ic substrate of 3.0cm Remark x 0.64 mm Marking : C1 The diode connected between the gate and source of the transistor serves as ...Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Sourc...
Description Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

File Size 48.29K  /  8 Page

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    2SJ567

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ567
OCR Text ...Waveform AS = ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e Test circuit RG = 25 W VDD = -50 V, L = 25.2 mH 5 2002-08-12 2SJ567 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve th...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV)

File Size 237.21K  /  7 Page

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    2SJ619

Toshiba Corporation
Toshiba Semiconductor
Sanyo Semicon Device
Part No. 2SJ619
OCR Text ...= Wave form ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e 5 2002-08-09 2SJ619 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Neverthe...
Description ZD-3.6V- 1 W
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV)
Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications

File Size 216.16K  /  6 Page

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    2SJ620

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ620
OCR Text ...ave form AS = ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e VDS RG = 25 W VDD = -50 V, L = 3.56 mH 5 2002-09-11 2SJ620 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the qual...
Description Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV)

File Size 221.26K  /  6 Page

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    2SK2157 D11233EJ1V0DS00 2SK2157-T1 2SK2157-T2

NEC, Corp.
NEC[NEC]
Part No. 2SK2157 D11233EJ1V0DS00 2SK2157-T1 2SK2157-T2
OCR Text ...10 ms, Duty cycle 50 % 7.5 cm2 x 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING 30 20 5.0 10.0 UNIT V V A A Total...Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Sourc...
Description N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开
From old datasheet system
N-channel MOS type field effect transistor

File Size 57.30K  /  6 Page

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    2SK2159 D11235EJ2V0DS00

NEC, Corp.
NEC[NEC]
Part No. 2SK2159 D11235EJ2V0DS00
OCR Text ...y Cycle 50 % Mounted on 16 cm2 x 0.7 mm ceramic substrate. VGS = 0 VDS = 0 TEST CONDITIONS RATINGS 60 14 2.0 4.0 UNIT V V A A Total Powe...Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Sourc...
Description N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开
From old datasheet system

File Size 59.10K  /  6 Page

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    AN5337K AN5337

PANASONIC[Panasonic Semiconductor]
Part No. AN5337K AN5337
OCR Text ... B out 2fH VCO AFC 2 X-RAY X-RAY-REF AGC RAMP AN5337K s Pin Descriptions Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 1...Cut-off : 80 Color bar signal (burst 300mVP-P) Color bar signal (burst 18mVP-P) Color bar burst 0dB=...
Description NTSC Video Signal Processor IC

File Size 208.88K  /  21 Page

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    BLF2045

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BLF2045
OCR Text ...50 26.3 50 50 10 , 0.6 W 13 x 0.9 mm 2 x 0.9 mm 15 x 1.7 mm 37 x 0.9 mm 6 x 1.7 mm 13 x 2.9 mm 6 x 15.8 mm 6 x 26 mm 12 x 1.9 mm 7.4 x 2.7 mm 3 x 0.9 mm 4.15 x 0.9 mm 2.5 x 2.5 mm 2.8 x 0.9 mm 14 x 0.9 mm VALUE 0.4 to 2.5 pF 2.4 pF 11 p...
Description UHF power LDMOS transistor

File Size 131.69K  /  11 Page

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