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				ZARLINK[Zarlink Semiconductor Inc]
Part No.	SL6649-1 SL6649-I SL6649-KG SL6649-MPEF SL6649-MPES SL66491-1
OCR Text	...om/obsolete_products/ SL6649-1 3115 - 4.1 SL6649-1 200MHz DIRECT CONVERSION FSK DATA RECEIVER The SL6649-1 is a low power direct co...13 14 DESCRIPTION 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 ...
Description	200MHz DIRECT CONVERSION FSK DATA RECEIVER
File Size	322.91K / 14 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50 APT50M50PVR
OCR Text	... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT50M50PVR UNIT Volts Amps 500 RY A IN IM MI...13 (.438) .635 (.025) .381 (.015) Dimensions in Millimeters and (Inches) ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 74.5A 0.050 Ohm
File Size	35.96K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024B2FLL APT8024LFLL
OCR Text	... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...13 22 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA Char...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.10K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024B2LL APT8024LLL
OCR Text	... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81 (.78...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	57.21K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024JFLL
OCR Text	... TC = 25C Pulsed Drain Current 1 SO ISOTOP (R) 2 T- 27 "UL Recognized" * Increased Power Dissipation * Easier To Drive * Po...13 22 C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junc...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.21K / 2 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-10100 ATF-10100-GP3
OCR Text	... Parameters and Test Conditions[1] Optimum Noise Figure: VCE = 2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz ...13 27 65 105 144 RN/50 0.40 0.29 0.22 0.16 0.10 NFO (dB) 2.0 1.5 1.0 0.5 0 2.0 NFO GA 15 12 9 ...
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	46.17K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text	...eel Packaging Option Available [1] Description The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect tr...13.0 11.0 20.0 12.0 140 130 -1.3 180 -0.5 0.6 GA Gain @ NFO; VDS = 2 V, IDS = 25 mA P1 dB G...
Description	ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	41.86K / 3 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
Part No.	ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text	...utput Power: 20.0 dBm typical P 1 dB at 4 GHz * Low Noise Figure: 1.2 dB Typical at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape...13.0 10.5 20.0 12.0 140 130 -1.3 180 -0.5 1.4 GA Gain @ NFO; VDS = 2 V, IDS = 25 mA P1 dB G...
Description	0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
File Size	44.24K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-26836 ATF-26836-STR ATF-26836-TR1
OCR Text	1 dB at 12 GHz * High Gain: 9.0 dB Typical GSS at 12 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packaging Option Availa...13.0 14.0 15.0 16.0 S11 Mag. .94 .90 .84 .75 .64 .52 .49 .52 .56 .61 .67 .69 .72 .72 .72 Ang. -38 -5...
Description	2-16 GHz General Purpose Gallium Arsenide FET
File Size	42.07K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1
OCR Text	...ive Low Noise Amplifiers Note: 1. See Noise Parameter Table. 1 GATE 360 3 DRAIN 2 SOURCE 25 20 Ga 1.2 NOISE FIGURE...13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.99 0.97 0.94 0.90 0.86 0.82 0.78 0.75 0.72 0.69 0.66 0.63 0...
Description	1.5-18GHz surface mount pseudomorphic HEMT 2-18 GHz Ultra Low Noise Pseudomorphic HEMT
File Size	41.62K / 4 Page	View it Online	Download Datasheet

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