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DYNEX[Dynex Semiconductor]
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Part No. |
GP350MHB06S
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OCR Text |
...(max) (max) 600V 2.0V 500A 350A 1000a
n - Channel High Switching Speed Low Forward Voltage Drop Isolated Base
APPLICATIONS
s s
PWM Motor Control UPS
11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1)
The Powerline range of mod... |
Description |
Half Bridge IGBT Module
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File Size |
125.80K /
10 Page |
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PHILIPS[Philips Semiconductors]
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Part No. |
AU5517 NE5517A NE5517 AU5517D NE5517N NE5517AN NE5517D
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OCR Text |
...-4 -5 -6 -7 -8 0.1A 1A 10A 100A 1000a AMPLIFIER BIAS CURRENT (IABC) 0.1 0.1A 1A 10A 100A 1000a 1 +25C +125C -55C INPUT OFFSET CURRENT (nA) VS = 15V +125C 10 3
Input Bias Current
VS = 15V
10 4
Input Bias Current
VS = 15V
10
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Description |
DUAL OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
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File Size |
186.35K /
18 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
GCU15CA-130
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OCR Text |
...IT = 1500A, VD = 3000V, di/dt = 1000a/s, Tj = 125C CS = 0.2F, RS = 5 (See Fig. 1, 2) IT = 800A, VD = 3000V, di/dt = 1000a/s CS = 0.2F, RS = 5, Tj = 125C (See Fig. 1, 2) IT = 1500A, VDM = 3/4 VDRM, VD = 3000V CS = 0.2F, RS = 5, Tj = 125C (Se... |
Description |
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
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File Size |
71.89K /
7 Page |
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IXYS CORP
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Part No. |
DK950-14N1W
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OCR Text |
...q rr (c) t j =150c 1500a 2000a 1000a 500a 1000 10000 1 10 100 1000 di/dt (a/s) recovered charge - q ra , 50% chord (c) 500a t j =150c 1000a 2000a 1500a figure 6 - peak reverse recovery current, i rm figure 7 - maximum recovery time, t rr ... |
Description |
1129 A, 1400 V, SILICON, RECTIFIER DIODE
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File Size |
322.05K /
9 Page |
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UN Semiconducctor INC
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Part No. |
UNB-141N-SMD UNB-181N-SMD UNB-201M-SMD
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OCR Text |
... 140(98~182) 100m / 50v 1.0 1000a 10kv / 150a , >200t unb-181n-smd 180(126~234) 100m / 50v 1.0 1000a 10kv / 150a , >200t unb-201m-smd 200(160~240) 100m /100v 1.0 1000a 10kv / 150a , >200t unb-301m-smd 300(240~360) 100m /... |
Description |
Spark Gap Protectors
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File Size |
292.46K /
4 Page |
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WESTCODE SEMICONDUCTORS LTD
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Part No. |
W0642WC180
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OCR Text |
...e - q rr (c) t j = 180c 1500a 1000a 500a 250a 100 1000 10000 1 10 100 1000 commutation rate - di/dt (a/s) recovered charge - q ra (c) t j = 180c 1500a 1000a 500a 250a figure 6 - peak reverse recovery current, i rm figure 7 - maximum rec... |
Description |
642 A, 1800 V, SILICON, RECTIFIER DIODE
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File Size |
149.96K /
9 Page |
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
GCU08BA-130
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OCR Text |
... IT = 800A, VD = 3000V, di/dt = 1000a/s, Tj = 125C CS = 0.1F, RS = 10 (See Fig. 1, 2) IT = 400A, VD = 3000V, di/dt = 1000a/s (See Fig. 1, 2) CS = 0.1F, RS = 10, Tj = 125C IT = 800A, VDM = 3/4 VDRM, VD = 3000V CS = 0.1F, RS = 10, Tj = 125C (... |
Description |
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
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File Size |
60.32K /
6 Page |
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Price and Availability
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