120-channel pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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120-channel Datasheet PDF File

For 120-channel Found Datasheets File :: 52687 Search Time::6.906ms
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				SONIX Technology Co., Ltd. SONiX Technology Company
Part No.	SNC10B
OCR Text	...OD IOS FOSC 100 100 100 100 4 6 120 120 120 120 2.0 mA VDD=3V,VO=2.4V mA VDD=3V,VO=0.4V mA VDD=3V,Buo1=1.5V mA VDD=3V,Buo1=1.5V mA VDD=3V,Bu...Channel Direct Drive Speech Controller SNC10B TR1 VDD P10 R OSC RST P11 TR2 TR5 TR9 T...
Description	One Channel Direct Drive Speech Controller
File Size	193.38K / 10 Page	View it Online	Download Datasheet

				SONIX[SONiX Technology Company]
Part No.	SNC599
OCR Text	...OSC Fir 100 100 100 100 4 6 5 9 120 120 120 120 2.0 38.5 mA VDD=3V,VO=2.4V mA VDD=3V,VO=0.4V mA VDD=4.5V,VO=3.9V mA VDD=4.5V,VO=0.4V mA VDD=...Channel Direct Drive Speech Controller 8 ROSC Performance ROSC frequency vs VDD (Typical value, ...
Description	Two Channel Direct Drive Speech Controller
File Size	285.73K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PSMNR90-30BL
OCR Text	...; v gs = 10 v; fig. 2 [1] - - 120 a p tot total power dissipation t mb = 25 c; fig. 1 - - 306 w t j junction temperature -55 - 175 c sta...channel 30 v 1.0 m? logic level mosfet in d2pak psmnr90-30bl all information provided in this docume...
Description	N-channel 30 V 1.0 mlogic level MOSFET in D2PAK
File Size	274.21K / 13 Page	View it Online	Download Datasheet

				Microchip
Part No.	MIC2193YM-TR
OCR Text	...3v 0.012 si9803( 2) 3.8 h 2k 120 f 6.3v ( 2) 2.2nf mic2193bm vinvdd cs outp gnd comp outn fb v out 1.8v, 5a si9804( 2) 22.6k 10k 220 ...channel mosfet. voltage swing is from ground to vin. on-resistance is typically 6 at 5v in . 8 out...
Description	Power Management - PWM Controllers
File Size	56.40K / 10 Page	View it Online	Download Datasheet

				Toshiba Semiconductor Toshiba Corporation
Part No.	TPC8206
OCR Text	...18 TPC8206 RDS (ON) - Ta 120 Common source Pulse test 100 IDR - VDS Drain-source ON resistance RDS (ON) (mW) (A) 100 ID = 5 A 80 2.5 1.3 ID = 5 A 10 10 5 1 1 VGS = 0, -1 V Drain reverse current IDR 3 60 VGS = ...
Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
File Size	218.90K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK752R3-40E
OCR Text	...; t mb = 25 c; fig. 1 [1] - - 120 a p tot total power dissipation t mb = 25 c; fig. 2 - - 293 w static characteristics r dson drain-sour...channel trenchmos standard level fet buk752r3-40e all information provided in this document is subje...
Description	N-channel TrenchMOS standard level FET
File Size	212.84K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK6C3R3-75C
OCR Text	...e temperature 003aaf928 0 40 80 120 160 200 0 50 100 150 200 t mb ( c) i d (a) t mb (c) 0 200 150 50 100 03na19 40 80 120 p der (%) 0 ...channel trenchmos intermediate level fet 5. thermal characteristics fig 3. safe operating area; ...
Description	N-channel TrenchMOS intermediate level FET
File Size	165.20K / 13 Page	View it Online	Download Datasheet

				ROHM
Part No.	BD2270HFV-TR
OCR Text	...a] ta=25 c 0 20 40 60 80 100 120 140 2 3 4 5 6 supply voltage : v cc [v] operating current : icc[a] ta=25 c figure 4 . standby curre...channel mosfet . the t urn on time of the n -c hannel mosfet is determined by the gate capacity...
Description	Controller ICs for High Side NMOSFET
File Size	434.01K / 21 Page	View it Online	Download Datasheet

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