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Mosel Vitelic, Corp.
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Part No. |
V826664G24SXSG-A1
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OCR Text |
...e delay(=t rrd ) 15ns 15ns 15ns 12ns 10ns 10ns 10ns 3ch 3ch 3ch 30h 28h 28h 28h 29 minimum ras to cas delay(=t rcd ) 20ns 20ns 15ns 18ns 15ns 15ns 20ns 50h 50h 3ch 48h 3ch 3ch 50h 30 minimum active to precharge time(=t ras ) 50ns 45ns... |
Description |
64M X 64 DDR DRAM MODULE, 0.8 ns, DMA200 SODIMM-200
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File Size |
152.54K /
15 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KM644002AE
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OCR Text |
...et to preliminary. 0.2. delete 12ns part but add 17ns part. 0.3. relax d.c and a.c parameters and insert new parameter(icc 1 ) with the test condition. 0.3.1. insert icc 1 parameter with the test condition as address is ... |
Description |
1M x 4 Bit(with OE)High-Speed CMOS Static RAM(1M x 4 带OE)高速CMOS 静RAM)
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File Size |
111.21K /
8 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KM641003B
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OCR Text |
...tics items previous spec. (8/10/12ns part) changed spec. (8/10/12ns part) i cc 150/140/130ma 150/145/140ma i sb 30ma 50ma draft data apr. 1st, 1997 jun. 1st, 1997 feb. 25th, 1998
km641003b cmos s... |
Description |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
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File Size |
106.53K /
8 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KM641001A
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OCR Text |
...0ns part) t cw 12/12/13ns 10/11/12ns t aw 12/12/13ns 10/11/12ns t wp1 (oe=h) 12/12/13ns 10/11/12ns t dw 8/9/10ns 7/8/9ns items previous spec. (15/17/20ns part) updated spec. (15/17/20ns part) icc 145/145/140ma 125/125/120ma t ow 3/4/5ns 3/3... |
Description |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
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File Size |
106.15K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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