150-ohm pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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150-ohm Datasheet PDF File

For 150-ohm Found Datasheets File :: 17014 Search Time::2.141ms
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				SamHop Microelectronics Corp.
Part No.	STM8403
OCR Text	...nel 30 20 7.2 30 1.7 2.0 -55 to 150 -30 20 -4.5 -18 -1.7 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Juncti...ohm 32 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R ...
Description	Dual E nhancement Mode Field Effect Transistor (N and P Channel)
File Size	823.83K / 11 Page	View it Online	Download Datasheet

				SamHop Microelectronics Corp.
Part No.	STM8500A
OCR Text	...20 4.5 3.8 20 1.7 2 1.44 -55 to 150 -60 -55 20 -3 -2.5 -15 -1.7 Unit V V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum ...ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Curren...
Description	Dual E nhancement Mode Field Effect Transistor (N and P Channel)
File Size	1,018.23K / 11 Page	View it Online	Download Datasheet

				Infineon
Part No.	CGY0819
OCR Text	...it K/W Symbol VD max. Value 9 4 150 -55...+150 tbd tbd Unit V A C C W W ID TCh Tstg PPulse Ptot RthChS Siemens Aktiengesellschaft S...Ohm, VD=3.5V, IDq=300mA, unless otherwise specified ) Characteristics Frequency range Cellular frequ...
Description	MESFET PA
File Size	339.69K / 18 Page	View it Online	Download Datasheet

				SamHop Microelectronics Corp.
Part No.	STM8500
OCR Text	...20 4.5 3.8 20 1.7 2 1.44 -55 to 150 -60 -55 20 -3 -2.5 -15 -1.7 Unit V V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum ...ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Curren...
Description	Dual E nhancement Mode Field Effect Transistor (N and P Channel)
File Size	984.15K / 11 Page	View it Online	Download Datasheet

				SamHop Microelectronics Corp.
Part No.	STM8501
OCR Text	...5 20 5 4.2 22 1.7 2 1.44 -55 to 150 -60 -55 20 - 3.5 - 2.8 - 18 -1.7 Unit V V V A A A A W C Drain-S ource Diode Forward C urrent a Max...ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Curren...
Description	Dual E nhancement Mode Field Effect Transistor (N and P Channel)
File Size	824.25K / 11 Page	View it Online	Download Datasheet

				SamHop Microelectronics Corp.
Part No.	STM9433
OCR Text	... 18 12 -5 -12.5 -1.7 2.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA ...ohm 80 m-ohm -8 6 995 150 87 VD = -10V ID = -1A VGEN = -4.5V R GE N = 6 ohm 6.1 14.8 59 29.6 VDS =-1...
Description	P-Channel E nhancement Mode Field Effect Transistor
File Size	586.96K / 7 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation
Part No.	HMC34707
OCR Text	...Path) +27 dBm +0.5V to -7.5 Vdc 150 C 440 C/W 540 C/W -65 to +150 C 4 SWITCHES - CHIP Thermal Resistance (Terminated Path) Storage Te...Ohm. Blocking capacitors are required if the RF line potential is not equal to 0V. Interface Schemat...
Description	GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz
File Size	200.67K / 6 Page	View it Online	Download Datasheet

				SamHop Microelectronics Corp.
Part No.	STS2300S
OCR Text	...mit 20 12 6 20 1.25 1.25 -55 to 150 Unit V V A A A W C Operating Junction and S torage Temperature R ange THE R MAL CHAR ACTE R IS ...ohm m-ohm ON CHAR ACTE R IS TICS Gate Threshold Voltage VGS(th) R DS (ON) ID(ON) gFS c Dr...
Description	N-Channel E nhancement Mode Field Effect Transistor
File Size	734.11K / 8 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MHV5IC1810N MHV5IC1810N11
OCR Text	...emperature range t stg --65 to +150 c operating junction temperature t j 150 c input power p in 12 dbm table 2. thermal characteristics ch...ohm system) v dd =28vdc,i dq1 = 120 ma, i dq2 =90ma, p out = 5 w avg., f1 = 1990 mhz, f2 = 1990.1 mh...
Description	RF LDMOS Wideband Integrated Power Amplifier
File Size	1,120.93K / 17 Page	View it Online	Download Datasheet

				SamHop Microelectronics...
Part No.	STF8234
OCR Text	150 i d units parameter 20 14 80 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v ds...ohm v gs =4.5v , i d =7a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage ...
Description	Super high dense cell design for low RDS(ON). N-Channel Enhancement Mode Field Effect Transistor
File Size	93.41K / 6 Page	View it Online	Download Datasheet

For 150-ohm Found Datasheets File :: 17014 Search Time::2.141ms
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