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Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
ACR400SE12 ACR400SE18 ACR400SE ACR400SE14 ACR400SE16
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| OCR Text |
... on-state current Conditions At 1500a peak, Tcase = 25oC At VRRM/VDRM, Tcase = 125oC To VDRM Tj = 125oC, Gate open circuit From VDRM to 125A Gate source 15V, 15 tr = 50ns. At Tvj = 125oC At Tvj = 125oC VD = 300V, gate source = 15V, 15 Min. ... |
| Description |
Circular Connector; No. of Contacts:37; Series:JTG06R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:14-35
Circular Connector; No. of Contacts:37; Series:JTG06R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:14-35
Circular Connector; No. of Contacts:19; Series:JTG06R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:14-19
Fast Turn-off Asymmetric Thyristor
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| File Size |
37.33K /
5 Page |
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EUPEC[eupec GmbH]
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| Part No. |
FS35R12KE3G
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| OCR Text |
..., Tvj= 125C IF=IC,nom, -diF/dt= 1500a/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C Sperrverzogerungsladung recoverred charge IF=IC,nom, -diF/dt= 1500a/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C Ausschal... |
| Description |
IGBT-Modules
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| File Size |
111.58K /
8 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
IDW100E60
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| OCR Text |
...0ns
0ns 500A/s
1000A/s
1500a/s
1000A/s
1500a/s
diF/dt, DIODE CURRENT SLOPE Figure 5. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=100A, Dynamic test circuit in Figure E)
diF/dt, DIODE ... |
| Description |
Fast Switching EmCon Diode
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| File Size |
161.76K /
6 Page |
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it Online |
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Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DF05125 DF051 DF05120 DF05122 DF05124
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| OCR Text |
... = 100V Parameter Conditions At 1500a peak, Tcase = 25oC At VRRM, Tcase = 150oC Typ. 5.0 1.6 Max. 1.85 100 800 250 1.1 0.5 Units V mA
s
C A V m V
2/7
DF051
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2) dIR/dt 0.5x IRR... |
| Description |
Fast Recovery Diode 1490 A, 2200 V, SILICON, RECTIFIER DIODE
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| File Size |
61.87K /
7 Page |
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it Online |
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Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
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| Part No. |
RM500DZ-M RM500DZ-H RM500UZ-M RM500DZ-24 RM500DZ-2H RM500UZ-24 RM500UZ-2H RM500UZ-H
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| OCR Text |
...=150C, VRRM applied Tj=25C, IFM=1500a, instantaneous meas. Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. -- -- ... |
| Description |
Rectifier Diodes, 800V
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型
BATTERY SEALED LEAD ACID 12V 5AH 大功率常规使用绝缘型
BATT SEALED LEAD ACID 12V 50AH 大功率常规使用绝缘型
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| File Size |
50.03K /
3 Page |
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it Online |
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