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  16m x 8bit x 4 banks synchrono Datasheet PDF File

For 16m x 8bit x 4 banks synchrono Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 HY57V281620ALT-P HY57V281620AT-6 HY57V281620AT-7 HY57V281620AT-8 HY57

HYNIx[Hynix Semiconductor]
Part No. HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 HY57V281620ALT-P HY57V281620AT-6 HY57V281620AT-7 HY57V281620AT-8 HY57V281620AT-H HY57V281620AT-P HY57V281620AT-K HY57V281620AT-S HY57V281620ALT-K HY57V281620ALT-H HY57V281620ALT-S HY57V281620A
Description 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz
4 banks x 2M x 16BITS synchronoUS DRAM

File Size 94.05K  /  13 Page

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    KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT-G8
Description 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 banks synchronous DRAM 100万16 × 4银行同步DRAM

File Size 124.02K  /  11 Page

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    TC554001FI TC554001FI-10 TC554001FI-85 TC554001FTI-10 TC554001FTI-85 TC554001FTI

TOSHIBA[Toshiba Semiconductor]
Part No. TC554001FI TC554001FI-10 TC554001FI-85 TC554001FTI-10 TC554001FTI-85 TC554001FTI
Description 524288 WORDS x 8bit STATIC RAM
524,288 WORDS x 8bit STATIC RAM

File Size 366.31K  /  9 Page

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    MT46H16M16LFBF-6ITH MT46H8M32LGB5-75ITA

Micron Technology
Part No. MT46H16m16LFBF-6ITH MT46H8M32LGB5-75ITA
Description Mobile DDR SDRAM MT46H16m16LF ?4 Meg x 16 x 4 banks MT46H8M32LF/LG ?2 Meg x 32 x 4 banks
8M x 32 DDR DRAM, 6 ns, PBGA90

File Size 3,039.04K  /  79 Page

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    K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45
Description 8M x 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

File Size 194.12K  /  21 Page

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    K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
Description 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns

File Size 415.47K  /  21 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL-6 KM48V8104BKL-45 KM48V8104BKL-6
Description 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns

File Size 385.67K  /  21 Page

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    K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
Description 8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns

File Size 415.01K  /  21 Page

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    SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL-6 KM48V8104CKL-5 KM48V8104CKL-45 KM48V8004CKL-45 KM48V8004CK-45
Description 8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns

File Size 387.62K  /  21 Page

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    K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S641632C-TC_L75 K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/L1L K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S641632C-TC_L75 K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/L1L K4S641632C-TC/L70 K4S641632C-TC/L80 K4S641632C-TC/L60 K4S641632C-TC/L75 K4S641632C-TL60 K4S641632C-TC80
Description 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 banks synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz

File Size 1,152.92K  /  42 Page

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For 16m x 8bit x 4 banks synchrono Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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