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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16V7245B MH16V7245BATJ-6 MH16V7245BATJ-5
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| OCR Text |
...cc 0.4 10 10 90 2360 2180 38 29 1820 1640 2360 2180
Unit V V uA uA uA mA
-5 -6
/RAS, /CAS cycling tRC=tWC=min. output open /RAS=/CAS =VIH, output open
/RAS=/CAS=/WE Vcc -0.2, output open
mA mA
Average supply current ICC4(AV)... |
| Description |
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
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| File Size |
150.39K /
23 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16V725BA MH16V725BATJ-6 MH16V725BATJ-5
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| OCR Text |
...Limits Typ Max Vcc 0.4 10 10 90 1820 1640 38 29 1820 1640 2360 2180
Unit V V uA uA uA mA
-5 -6
/RAS, /CAS cycling tRC=tWC=min. output open /RAS=/CAS =VIH, output open
/RAS=/CAS=/WE Vcc -0.2, output open
mA mA
Average supply ... |
| Description |
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
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| File Size |
147.44K /
22 Page |
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it Online |
Download Datasheet |
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IDT
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| Part No. |
IDT821034
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| OCR Text |
...B x gain_R ] where: gain_X0dB = 1820; gain_X is the target gain; Coeff_X should be in the range of 0 to 8192. gain_R0dB = 2506; gain_R is the target gain; Coeff_R should be in the range of 0 to 8192. A gain programming coefficient is 14-bit... |
| Description |
QUAD PCM CODEC WITH PROGRAMMABLE GAIN
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| File Size |
303.61K /
19 Page |
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it Online |
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Motorola
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| Part No. |
MRF18085ALSR3 MRF18085AR3 MRF18085A
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| OCR Text |
...= 8 W 4W
1W 0.5 W
1000
1820
1840
1860
1880
1900
Pout, OUTPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 5. Power Gain versus Output Power
Figure 6. Output Power versus Frequency
17 16 G ps , POWER GAIN (dB) ... |
| Description |
GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
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| File Size |
411.94K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HUF76633S3S HUF76633P3 FN4693 HUF76633P3T
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| OCR Text |
...ce Reverse Transfer Capacitance 1820 415 115 pF pF pF 56 30 2 6 15 67 37 2.4 nC nC nC nC nC 7.5 55 63 83 95 220 ns ns ns ns ns ns
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage SYMBOL VSD trr QRR ISD = 27A ... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 38A I(D) | TO-220AB
38A, 100V, 0.036 Ohm, N-Channel, Logic 38A, 100V, 0.036 Ohm, N-Channel, Logic
From old datasheet system
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
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| File Size |
335.75K /
9 Page |
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Motorola Semiconductor Products Inc
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| Part No. |
MHW1810-1
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| OCR Text |
... 27 26 25 24 23 22 21 1800 1810 1820 1830 1840 1850 1860 f, FREQUENCY (MHz) 1870 1880 1890 TC = 85C TC = -10C TC = 25C Pout = 10 W
Figure 4. Power Gain versus Frequency
Figure 5. Gain versus Frequency
40 G p , POWER GAIN VARIATION ... |
| Description |
MICROWAVE/MILLIMETER WAVE AMPLIFIER,HYBRID,MOT CASE,METAL
From old datasheet system
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| File Size |
117.90K /
8 Page |
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it Online |
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Price and Availability
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