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1e5 Datasheet PDF File

For 1e5 Found Datasheets File :: 281 Search Time::1.078ms
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				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	FSL9130R FN4083 FSL9130R4 FSL9130D FSL9130D1 FSL9130D3 FSL9130R1 FSL9130R3 FSL913A0R
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 1...
Description	5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF CAP 1000UF 200V ELECT TS-HB 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF From old datasheet system 5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
File Size	45.02K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSS9130R FN4082 FSS9130R4 FSS9130D FSS9130D1 FSS9130D3 FSS9130R1 FSS9130R3
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 1...
Description	6A/ -100V/ 0.660 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs From old datasheet system
File Size	44.30K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSYC360D FSYC360R4 FSYC360D1 FSYC360R FSYC360R3
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 26 37 37 37 37 TYPICAL RANGE () 43 43 36 36 36 36 APPLIED VGS B...
Description	Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
File Size	76.16K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSL23A0R FSL23A0D FN4476 FSL23A0R4 FSL23A0D1 FSL23A0D3 FSL23A0R1 FSL23A0R3
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V...
Description	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs 6A/ 200V/ 0.350 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs From old datasheet system
File Size	71.38K / 8 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	FSL23A4R FSL23A4D FN4474 FSL23A4R4 FSL23A4D1 FSL23A4D3 FSL23A4R1 FSL23A4R3
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V...
Description	5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 5 A, 250 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF RECTIFIER BRIDGE 6A 100V 125A-ifsm 1.1V-vf 10uA-ir PBPC3 200/BOX 5 A, 250 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF RECTIFIER BRIDGE 3A 600V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX RECTIFIER BRIDGE 3A 1000V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX From old datasheet system 5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
File Size	46.28K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	JANSR2N7401 FN4571
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (...
Description	6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET From old datasheet system
File Size	54.70K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	JANSR2N7403 FN4486
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 ...
Description	22 A, 100 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA From old datasheet system 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET 22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET
File Size	44.37K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSF9150R FSF9150D FN4089 FSF9150R4 FSF9150D1 FSF9150D3 FSF9150R1 FSF9150R3
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 1...
Description	22A/ -100V/ 0.140 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs From old datasheet system
File Size	44.38K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	FSL234R FSL234D FN4030 FSL234R4 FSL234D1 FSL234D3 FSL234R1 FSL234R3
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V...
Description	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs From old datasheet system 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 4 A, 250 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
File Size	45.36K / 8 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	FSPL234F FSPL234R FN4881 FSPL234R4
OCR Text	...ven National Labs. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 37 37 60 60 82 82 TYPICAL RANGE () 36 36 32 32 28 28 APPLIED VGS B...
Description	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐射N沟道MOS场效应管) TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 7A I(D) \| TO-205AF From old datasheet system
File Size	81.68K / 8 Page	View it Online	Download Datasheet

For 1e5 Found Datasheets File :: 281 Search Time::1.078ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |