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HYNIX
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| Part No. |
HY57V16161
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| OCR Text |
2 Banks x 512K x 16 Bit Synchronous DRAM
DESCRIPTION
THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for...9ns 3. VDD(min) of HY57V161610ET-5/55 is 3.15V`
Rev. 0.1 / June 2003
4
HY57V161610E
CAPACI... |
| Description |
2 Banks x 512K x 16 Bit Synchronous DRAM
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| File Size |
142.50K /
13 Page |
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Download Datasheet
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Mosel Vitelic, Corp.
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| Part No. |
V826664G24SXSG-A1
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| OCR Text |
2 may 2003 features jedec 200 pin ddr unbuffered small-outline, dual in-line memory module (sodimm); 67,108,864 x 64 bit organization. ...9ns 0.9ns 0.75 ns 0.6ns 0.6ns 0.6ns b0h 90h 90h 75h 60h 60h 60h 33 command and address signal input... |
| Description |
64M X 64 DDR DRAM MODULE, 0.8 ns, DMA200 SODIMM-200
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| File Size |
152.54K /
15 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
MH1S72CPG-10 MH1S72CPG-12 MH1S72CPG-15
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| OCR Text |
...ck rising edge burst length- 1/2/4/8(programmable) dual bank operation controlled by ba(bank address) /cas latency- 1/2/3(programmable) app...9ns (cl=3) -10 100mhz 8ns(cl=3) -12 83mhz 8ns (cl=3) (component sdram) module item "-10","-12" , and... |
| Description |
75497472-BIT (1048576-WORD BY 72-BIT)SynchronousDRAM
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| File Size |
719.75K /
47 Page |
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it Online |
Download Datasheet |
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Price and Availability
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