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OV20381 BU4506 24C32 IN07205 2SB1154 CT1502 U2227 03309904
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  200a 800v Datasheet PDF File

For 200a 800v Found Datasheets File :: 606    Search Time::1.469ms    
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    FQA6N80

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA6N80
OCR Text ...g TJ = 25C 3. ISD 5.8A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. A, Septembe...
Description 800v N-Channel MOSFET

File Size 675.97K  /  8 Page

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    FQA8N80C

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA8N80C
OCR Text ...g TJ = 25C 3. ISD 8.4A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2003 Fairchild Semiconductor Corporation Rev. A, March 2003...
Description 800v N-Channel Advance Q-FET C-Series
800v N-Channel MOSFET
From old datasheet system

File Size 600.35K  /  8 Page

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    FQAF6N80

FAIRCHILD[Fairchild Semiconductor]
Part No. FQAF6N80
OCR Text ...g TJ = 25C 3. ISD 5.8A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. A, Septembe...
Description 800v N-Channel MOSFET

File Size 659.92K  /  8 Page

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    FQB6N80 FQI6N80 FQB6N80TM

FAIRCHILD[Fairchild Semiconductor]
http://
Part No. FQB6N80 FQI6N80 FQB6N80TM
OCR Text ...g TJ = 25C 3. ISD 5.8A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. A, Septembe...
Description 800v N-Channel QFET
800v N-Channel MOSFET

File Size 682.20K  /  9 Page

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    FQPF6N80

FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF6N80
OCR Text ...g TJ = 25C 3. ISD 5.8A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. A, Septembe...
Description    800v N-Channel MOSFET

File Size 664.64K  /  8 Page

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    SANREX[SanRex Corporation]
Part No. PE200GB80 PE200GB40 PD200GB80 PD200GB40 PK200GB80 PK200GB40 PK_PDPE200GB40-80PDF
OCR Text ...e. Isolated mounting base IT AV 200a, IT RMS 310A, ITSM 5500A di/dt 200 A/ s dv/dt 500V/ s Applications Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches PK Internal Configurations PD PE Unit A...
Description From old datasheet system
THYRISTOR MODULE

File Size 109.92K  /  2 Page

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    RS406L RS407L RS401L RS402L RS403L RS404L RS405L

Micro Commercial Components Corp.
MCC[Micro Commercial Components]
Part No. RS406L RS407L RS401L RS402L RS403L RS404L RS405L
OCR Text ...op Per Element IF(AV) IFSM 4.0A 200a TA = 50C 8.3ms, half sine G E D VF 1.1V IFM = 3.0A; TJ = 25C DIM A B C D E G H INCHES MIN .728 .600 .750 .236 .180 -----.048 DIMENSIONS MM MIN 18.50 15.20 19.00 6.00 4.60 -----1.20 Maxim...
Description Bridge Rectifier 50 to 1000 Volts 4 Amp Single Phase

File Size 84.96K  /  2 Page

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    Sanyo
Part No. 2SA1831 0165
OCR Text ... VCB=-100V, f=1MHz IC=-1mA, IB=-200a IC=-1mA, IB=-200a 20 10 1.6 -1 -1.5 Conditions Ratings min typ max -1 -1 50 MHz pF V V Unit A A Any and all SANYO products described or contained herein do not have specifications that can handle appl...
Description PNPTriple Diffused Planar Silicon Transistors High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system

File Size 90.56K  /  3 Page

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    IGW40T120 Q67040-S4519 GW40T120

INFINEON[Infineon Technologies AG]
Part No. IGW40T120 Q67040-S4519 GW40T120
OCR Text ... 12V 14V 16V 300A 10s 200a 5s 100A 0s 0A 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C) VGE, GATE-...
Description From old datasheet system
Low Loss IGBT in Trench and Fieldstop technology
IGBTs & DuoPacks - 40A 1200V TO247 IGBT

File Size 407.11K  /  12 Page

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    IRG4PH20KD

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH20KD
OCR Text ...g. 285 427 TJ = 125C 16 di/dt = 200a/s 380 -- A/s TJ = 25C See Fig. 307 -- TJ = 125C 17 2 www.irf.com IRG4PH20KD 10 F o r b o t...800v 960V V GE = 15V TJ = 25 C I C = 5.0A 10 RG = 50Ohm VGE = 15V VCC =800v 960V IC = 10 A...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 1200伏,的Vce(on)典\u003d 3.17V,@和VGE \u003d 15V的,集成电路\u003d 5.0a中)

File Size 273.76K  /  10 Page

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