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International Rectifier
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Part No. |
IRF3703 IRF3703PBF
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OCR Text |
...x. 210 100
1000 230 3.8 1.5 20 5.0 -55 to + 175
Units
A W W/C V V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Cas...0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 24V, = 1.0MHz --- VGS = 0V, VDS = 0V t... |
Description |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
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File Size |
93.04K /
8 Page |
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IRF[International Rectifier] International Rectifier, Corp.
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Part No. |
IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
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OCR Text |
...rage Temperature Range
Max.
20 20 77 64 308 87 61 0.59 -55 to + 175
Units
V V A W W mW/C C
Thermal Resistance
Parameter
RJC R...0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avala... |
Description |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条? TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
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File Size |
123.62K /
10 Page |
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International Rectifier, Corp. IRF[International Rectifier]
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Part No. |
IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
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OCR Text |
... Temperature Range
Max.
30 20 90 57 360 120 3.1 0.96 -55 to + 150
Units
V V A W W mW/C C
Thermal Resistance
Parameter
RJC RCS ...0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avala... |
Description |
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A? Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型? Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
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File Size |
120.60K /
11 Page |
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Price and Availability
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