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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDPF51N25
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| OCR Text |
... 25C VDS = 250V, VGS = 0V VDS = 200v, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 14A VDS = 40V,...ms 10 ms 100 ms DC
Operation in This Area is Limited by R DS(on)
50
40
30
10
0
10... |
| Description |
FDPF51N25
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| File Size |
836.80K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDPF44N25T FDPF44N25
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| OCR Text |
... 25C VDS = 250V, VGS = 0V VDS = 200v, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 9A VDS = 40V, ...ms DC
ID, Drain Current [A]
1 ms 10 ms
10
10
-1
Notes :
1. TC = 25 C 2. TJ = 150... |
| Description |
250V N-Channel MOSFET
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| File Size |
836.01K /
7 Page |
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STMicro
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| Part No. |
STTH6003CW STTH6003TV
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| OCR Text |
...20 18 16 14 12 10 8 6 4 2 0
VR=200v Tj=125 C IF=IF(av) IF=2*IF(a v)
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode).
trr(ns) 180 160 140 120 100 80 60 40 20 0
VR=200v Tj=125 C
IF=2*IF(av)
IF=0.5*IF(av)
... |
| Description |
HIGH FREQUENCY SECONDARY RECTIFIER
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| File Size |
71.33K /
6 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
FDPF39N20 FDP39N20 FDP39N20_07 FDP39N2007
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| OCR Text |
200v N-Channel MOSFET
March 2007
FDP39N20 / FDPF39N20
200v N-Channel MOSFET Features
* 39A, 200v, RDS(on) = 0.066 @VGS = 10 V * Low ...ms 10 ms 100 ms DC
10
2
10 s 100 s 1 ms 10 ms
Operation in This Area is Limited by R DS(on... |
| Description |
200v N-Channel MOSFET 39 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
1,067.74K /
10 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDPF33N25
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| OCR Text |
... 25C VDS = 250V, VGS = 0V VDS = 200v, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 10A VDS = 40V,...ms
10
1
100 ms
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
1 ms
... |
| Description |
250V N-Channel MOSFET
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| File Size |
786.55K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDP61N20
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| OCR Text |
200v N-Channel MOSFET
September 2005
UniFET
FDP61N20
200v N-Channel MOSFET Features
* 61A, 200v, RDS(on) = 0.041 @VGS = 10 V * Low ...ms 10 ms DC 100 ms
Operation in This Area is Limited by R DS(on)
10
0
10
-1
? Notes ... |
| Description |
200v N-Channel MOSFET
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| File Size |
592.37K /
8 Page |
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意法半导
STMicro
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| Part No. |
CLP30-200B1 5477
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| OCR Text |
...etector Overvoltage reference (>200v) 1
2 1
-200
VLG
OR SW1
1 3
+200
VLG
GND
In ringing mode (Ring relay in positio...ms tp = 200 ms tp = 1 s Value 30 40 8.5 4.5 3.5 -40 to +150 150 260 Unit A A C C
ITSM
Tstg Tj ... |
| Description |
Overvoltage and Overcurrent Protection for Telcom Line(电信装备的过压和过流保护)
From old datasheet system
OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE
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| File Size |
107.13K /
11 Page |
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