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INTERSIL[Intersil Corporation]
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| Part No. |
HA1-5104_883 HA-5104883 HA-5104/883
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| OCR Text |
... very moderate amount of power (225mw per package) while also saving board space and cost. This impressive combination of features make this amplifier ideally suited for designs ranging from audio amplifiers and active filters to the most d... |
| Description |
Op Amp, Quad 8MHz, Unity Gain Stable, Low Noise, 883 Compliant
Low Noise, High Performance, Quad Operational Amplifier
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| File Size |
52.21K /
5 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HI1826JCQ HI1826
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| OCR Text |
...s Semiconductor, . . . . . . . .225mw Panel,Error Rate PART TEMP. * Low LCD) NUMBER RANGE (oC) /Creator () /DOCINFO pdfmark Applications HI1826JCQ -20 to 75
* RGB Graphics Processing
PACKAGE 32 Ld MQFP
PKG. NO. Q32.7x7-S
[ /PageMo... |
| Description |
6 Bit, 140 Msps, Flash A/D Converter
6-Bit, 140 MSPS, Flash A/D Converter
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| File Size |
52.41K /
8 Page |
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it Online |
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MCC[Micro Commercial Components]
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| Part No. |
MMBD6100
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| OCR Text |
...IF PTOT 70V
G H J
70V 200mA 225mw 1.8mW/OC 300mW 2.4mW/OC 500mA 150OC 0.55~0.7V 0.85~1.1V
IBR=100A
K
PTOT IFSM TJ VF
TA=25 C Derate above 25OC TA=25OC Derate above 25OC 8.3ms, half sine
O
DIMENSIONS INCHES MIN .110 .083 ... |
| Description |
Monolithic Dual Switching Diode
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| File Size |
116.19K /
2 Page |
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it Online |
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NTE Electronics, Inc.
NTE[NTE Electronics]
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| Part No. |
NTE2406
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| OCR Text |
.... . . . . . . . . . . . . . . . 225mw Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/C Thermal Resistance, Junction-to-Ambient (FR-5 Board, Note 1), RthJA . . ... |
| Description |
Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2407)
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| File Size |
25.44K /
3 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE2411
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| OCR Text |
.... . . . . . . . . . . . . . . . 225mw Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . ... |
| Description |
Silicon PNP Transistor High Voltage Amp/Driver (Compl to NTE2410)
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| File Size |
21.60K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE395
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| OCR Text |
.... . . . . . . . . . . . . . . . 225mw Power Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . .... |
| Description |
Silicon PNP Transistor Wide Band Linear Amplifier
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| File Size |
19.23K /
2 Page |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGA4805-EPU
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| OCR Text |
...5V supply typically dissipating 225mw of DC power. The device is backside grounded with vias and requires no grounding bond wires. The TGA4805 requires off-chip decoupling and the RF ports are DC coupled. Each device is 100% RF tested on-wa... |
| Description |
10GB/s Differential Transimpedance Amplifier
10 GB/s Differential Transimpedance Amplifier
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| File Size |
206.34K /
6 Page |
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it Online |
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Price and Availability
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