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  250ua Datasheet PDF File

For 250ua Found Datasheets File :: 5560    Search Time::1.078ms    
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    MC33989 MC33989D

Motorola, Inc
Part No. MC33989 MC33989D
OCR Text ... High Level Output Voltage (I0=-250ua) INT Pin Low Level Output Voltage (I0=1.5mA) High Level Output Voltage (I0=-250ua) HS1: 150mA High side output pin Vol Voh 0 Vdd1-0.9 0.9 V Vol Voh 0 Vdd1-0.9 0.9 V 1v<Vsup<27V Iol Vol Ipdw reset-dur 0 ...
Description System Basis Chip With High Speed CAN Transceiver

File Size 268.15K  /  23 Page

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    SamHop Microelectronics...
Part No. STT03N20
OCR Text ...hold voltage v ds =v gs , i d =250ua v ds =160v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter co...
Description Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 125.52K  /  8 Page

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    SamHop Microelectronics...
Part No. STUD35L01A
OCR Text ...eshold voltage v ds =v gs ,i d =250ua v ds =80v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter condition...
Description Super high dense cell design for low RDS(ON).

File Size 118.36K  /  8 Page

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    SamHop Microelectronics...
Part No. STUD36L01A
OCR Text ...eshold voltage v ds =v gs ,i d =250ua v ds =80v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter condition...
Description Super high dense cell design for low RDS(ON).

File Size 108.33K  /  8 Page

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    Xian Semipower Electron...
Part No. SWF634
OCR Text ...reakdown voltage v gs =0v, i d =250ua 250 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.35 - v/ o c i dss drain to source leakage current v ds =250v, v gs =0v - - 1 ua v ds =200v, t c =125...
Description N-channel MOSFET

File Size 708.74K  /  7 Page

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    SamHop Microelectronics...
Part No. STT03N10
OCR Text ...hold voltage v ds =v gs , i d =250ua v ds =80v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter con...
Description Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 132.72K  /  8 Page

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    SamHop Microelectronics...
Part No. STT03L06
OCR Text ...hold voltage v ds =v gs , i d =250ua v ds =48v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter con...
Description Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 133.05K  /  8 Page

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    SamHop Microelectronics...
Part No. STT03L03
OCR Text ...hold voltage v ds =v gs , i d =250ua v ds =24v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter con...
Description Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 132.70K  /  8 Page

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    SamHop Microelectronics...
Part No. STT02N20
OCR Text ...hold voltage v ds =v gs , i d =250ua v ds =160v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter co...
Description Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 132.69K  /  8 Page

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    SamHop Microelectronics
Part No. STT02N10
OCR Text ...hold voltage v ds =v gs , i d =250ua v ds =80v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter con...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 132.77K  /  8 Page

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