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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FSCM0565RD FSCM0565R FSCM0565RCYDTU
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| OCR Text |
...mum junction temperature 3. L = 30mh, VDD = 50V, RG = 25, starting Tj = 25C 4. L = 13uH, starting Tj = 25C
4
FSCM0565R
Electrical Characteristics
(Ta = 25C unless otherwise specified) Parameter Sense FET SECTION Drain source break... |
| Description |
SMPS Power Switch for Set Top Box, (Green) Green Mode Fairchild Power Switch (FPS)
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| File Size |
344.44K /
20 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE394
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| OCR Text |
... Time VBE = 20V, RBE = 100, l = 30mh IC = 1A, IB1 = 100mA, VCC = 200V IC = 1A, IB1 = -IB2 = 100mA, VCC = 200V Min 30 2.5 100 - - Typ - - - 0.2 0.2 Max - - - - - mJ s s Unit
.600 (15.24)
.060 (1.52) .173 (4.4)
C
.156 (3.96) Dia. ... |
| Description |
Silicon NPN Transistor Power Amp, High Voltage Switch
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| File Size |
19.00K /
2 Page |
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APEX[Apex Microtechnology]
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| Part No. |
PA12A PA12
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| OCR Text |
...00mH 20mH 20V 60mF 20mF 1,000mH 30mh 15V 150mF 60mF 2,500mH 50mH *If the inductive load is driven near steady state conditions, allowing the output voltage to drop more than 8V below the supply rail with ILIM = 15A or 25V below the supply r... |
| Description |
POWER OPERATIONAL AMPLIFIERS
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| File Size |
174.48K /
4 Page |
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APEX[Apex Microtechnology]
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| Part No. |
PA13A PA13
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| OCR Text |
...00mH 20mH 20V 60mF 20mF 1,000mH 30mh 15V 150mF 60mF 2,500mH 50mH *If the inductive load is driven near steady state conditions, allowing the output voltage to drop more than 12.5V below the supply rail with ILIM = 10A or 27V below the suppl... |
| Description |
POWER OPERATIONAL AMPLIFIERS
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| File Size |
181.53K /
4 Page |
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http:// FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSF7N60A
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| OCR Text |
...aximum Junction Temperature y L=30mh, IAS=5.4A, VDD=50V, RG=27, Starting TJ =25C z ISD 7A, di/dt 120A/s, VDD BVDSS, Starting TJ =25C { Pulse Test: Pulse Width 250s, Duty Cycle 2% | Essentially Independent of Operating Temperature
2
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| Description |
N-CHANNEL POWER MOSFET
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| File Size |
252.02K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSP4N80AS
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| OCR Text |
...imum Junction Temperature 2 O L=30mh, I AS=4.5A, V DD=50V, R G=27, Starting T J =25 C 3 _ _ 120A/ s, V DD <BV DSS , Starting T J =25 C _ O ISD <4.5A, di/dt < 4 _ O Pulse Test : Pulse Width = 250 s, Duty Cycle <2% 5 O Essentially Independent... |
| Description |
ADVANCED POWER MOFET
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| File Size |
279.41K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSP5N60A
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| OCR Text |
...Maximum Junction Temperature L=30mh, IAS=4.5A, VDD=50V, RG=25, Starting TJ =25 ISD4.5A, di/dt100A/s, VDDBVDSS , Starting TJ =25 Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature
N-CHANNE... |
| Description |
Advanced Power MOSFET
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| File Size |
227.30K /
7 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
TDA7490L
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| OCR Text |
... 17V; RL = 8; Demod. filter L = 30mh, C = 220nF; f = 1KHz; fsw = 200kHz; Tamb = 25`C unless otherwise specified.)
Symbol VS Iq VOS PO PO(BTL) Parameter Supply Range Total Quiescent Current Output Offset Voltage Output Power Output Power in... |
| Description |
15W + 15W STEREO CLASS-D AMPLIFIER28W MONO IN BTL
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| File Size |
163.15K /
9 Page |
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it Online |
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