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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FSAM10SH60
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| OCR Text |
...ng * Inverter power rating of 0.4kw / 100~253 Vac * Isolation rating of 2500Vrms/min. * Very low leakage current due to using ceramic substrate * Adjustable current protection level by varying series resistor value with sense-IGBTs
Appli... |
| Description |
From old datasheet system
Smart Power Module (SPM)
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| File Size |
347.70K /
17 Page |
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http://
MPS Industries, Inc.
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| Part No. |
NE-4 NEU-6 NEU-8 NEU-4 NE-6 NE-8
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| OCR Text |
...s 20 amps maximum output power 4kw 6kw 8kw high voltage range from -3kv to -10kv (adjustable) maximum emission current 0.4 amps 0.6 amps 0.8 amps high voltage ripple less than 150 volts overall specifications ne-4 ne-6 ne-8 input volta... |
| Description |
E-BEAM GUN SWITCHING POWER SUPPLY
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| File Size |
55.87K /
1 Page |
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http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
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| Part No. |
HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY29LV320TF-12I HY29LV320TT-12I HY29LV320BF-12I HY29LV320TF-90 HY29LV320TF-90I HY29LV320TT-90I HY29LV320BF-90I HY29LV320BT-70I HY29LV320BT-80I HY29LV320TT-80I HYNIXSEMICONDUCTORINC-HY29LV320BT-80 HY29LV320TF-70I HY29LV320BF-70I HY29LV320BT-90
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| OCR Text |
... range, containing one 8kw, two 4kw, one 16kw and sixty-three 32kw sectors. hy29lv320t - a device with boot-sector archi- tecture with the boot sectors at the top of the address range, containing one 8kw, two 4kw, one 16kw and sixty-thre... |
| Description |
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
150 x 32 pixel format, LED Backlight available
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
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| File Size |
328.19K /
44 Page |
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Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
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| Part No. |
M5M29FB800VP-10 M5M29FT800VP-10 M5M29FT800VP-12 M5M29FB800VP-12 M5M29FB800FP-10 M5M29FT800FP-10 M5M29FB800FP-12
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| OCR Text |
... 16kw parameter block2 4kw parameter block1 4kw boot block 8kw address inputs /byte chip enable input output enable input write enable input write protect input reset/power down input byte enable input out... |
| Description |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 8,388,608位（1048,576 - Word 524,288字BY16位）的CMOS 3.3只，块擦除闪
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| File Size |
145.96K /
14 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN662
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| OCR Text |
...nant converter (qrc) rated at 1.4kw with 300v input voltage and 100v output, these parameters may be: m = f s / f r = 1/3 -> f r = 3f s di/dt = 2 p f i max where i max = 2i out = 28a t on = 1/2f r t delay = t on = t r /2 = 1/2f r w... |
| Description |
IGBTS IN RESONANT CONVERTERS
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| File Size |
80.13K /
8 Page |
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Price and Availability
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