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![HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND](Maker_logo/intersil_corporation.GIF)
INTERSIL[Intersil Corporation] Fairchild Semiconductor, Corp.
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Part No. |
HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND
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OCR Text |
...180 280 400 640 MAX 250 2 2.4 3.5 250 55 75 30 16 250 350 500 700 UNITS V A A mA V V V nA A V nC nC ns ns ns ns J J
Collector to Emitter ...10 5 0
VGE = 15V
TJ = 150oC, RG = 25, VGE = 15V, L = 200H
20
15
10
5
0
25
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Description |
From old datasheet system 25A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N沟道绝缘栅双极型晶体 5 A, 1200 V, N-CHANNEL IGBT, TO-247
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File Size |
86.05K /
7 Page |
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![MRF9100R3 MRF9100 MRF9100SR3](Maker_logo/motorola_inc.GIF)
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
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Part No. |
MRF9100R3 MRF9100 MRF9100SR3
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OCR Text |
...s (Typ) Power Gain @ P1dB -- 16.5 dB (Typ) Efficiency @ P1dB -- 53% (Typ) * Integrated ESD Protection * Designed for Maximum Gain and Insert...10 1 1 Adc Adc Adc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 Vdc, ID = 500 Adc) Gate Q... |
Description |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
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File Size |
390.38K /
12 Page |
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it Online |
Download Datasheet
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Price and Availability
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