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MICROSEMI POWER PRODUCTS GROUP Microsemi Corporation
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| Part No. |
APTGF90DA60CT1G
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| OCR Text |
...
200
300 VCE (V)
400
500
600
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.35 Thermal Impedan...s products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,5... |
| Description |
110 A, 600 V, N-CHANNEL IGBT Boost chopper NPT IGBT SiC Chopper diode
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| File Size |
209.61K /
5 Page |
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it Online |
Download Datasheet
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http://
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| Part No. |
APTM120DA30CT1G
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| OCR Text |
... v gs = 0v t j = 125c 500 a r ds(on) drain ? source on resistance v gs = 10v, i d = 25a 300 360 m v gs(th) gate thre...s 80 nc f = 1mhz, v r = 200v 192 c total capacitance f = 1mhz, v r = 400v 138 pf... |
| Description |
MOSFET SiC chopper diode
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| File Size |
190.64K /
5 Page |
View
it Online |
Download Datasheet
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MICROSEMI POWER PRODUCTS GROUP Microsemi Corporation
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| Part No. |
APTDC30H601G
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| OCR Text |
...0 30
TJ=125C TJ=75C TJ=175C
500 400 300 200 100 0 200
TJ=125C TJ=75C
20 10 0 0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V) Capac...s products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,5... |
| Description |
30 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE SiC Diode Full Bridge Power Module
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| File Size |
102.26K /
3 Page |
View
it Online |
Download Datasheet
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Price and Availability
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