| |
|
 |
Diodes Inc.
|
| Part No. |
DMN5L06DMK
|
| OCR Text |
...t c = 25c i dss 60 na v ds = 50v, v gs = 0v gate-body leakage i gss 1 500 50 a na na v gs = 12v, v ds = 0v v gs = 10v, v ds = 0v v gs ...140ma d i = 280ma d t , channel temperature ( c) fig. 7 ch static drain-source on-state resistance ... |
| Description |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
| File Size |
128.75K /
5 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Panasonic Corporation
|
| Part No. |
2SD1269
|
| OCR Text |
...= 0.1a, i b2 = C 0.1a, v cc = 50v min 80 45 60 typ 30 0.5 2.5 0.15 max 10 50 260 0.5 1.5 unit m a m a v v v mhz m s m s m s * h fe2 rank ...140ma 120ma 100ma 60ma 40ma 20ma 10ma t c =25?c collector to emitter voltage v ce ( v ) collec... |
| Description |
Silicon NPN epitaxial planar type(For power switching)
|
| File Size |
54.31K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
Linear Technology, Corp.
|
| Part No. |
LT1938EDDTRPBF
|
| OCR Text |
.................................. 50v boost pin above sw pin ......................................... 25v fb, rt, v c voltage .............140ma i l 0.5a/div v sw 5v/div v out 10mv/div 1938 g23 1s/div v in = 12v, front page application i ... |
| Description |
25V, 2.2A, 2.8MHz Step-Down Switching Regulator; Package: DFN; No of Pins: 10; Temperature Range: -40°C to 125°C 4 A SWITCHING REGULATOR, 3300 kHz SWITCHING FREQ-MAX, PDSO10
|
| File Size |
296.95K /
24 Page |
View
it Online |
Download Datasheet |
| |
|
|
Panasonic
|
| Part No. |
2SD1707
|
| OCR Text |
... c /i b =10(i b1 =?i b2 ) v cc =50v t c =25?c t stg t f t on 0.01 1 0.1 1 10 100 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) non repetitive pulse t c =25?c i cp i c t=10ms t=1ms dc
2sd1707 3 sjd00211b... |
| Description |
Power Device - Power Transistors - General-Purpose power amplification
|
| File Size |
88.64K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Diodes, Inc.
|
| Part No. |
DMN5L06V-7 DMN5L06VA-7
|
| OCR Text |
... 125c i dss 0.1 500 a v ds = 50v, v gs = 0v gate-body leakage i gss 20 na v gs = 20v, v ds = 0v on characteristics (note 4) gate thres...140ma d i = 280ma d 1 i , drain current (a) fig. 5 static drain-source on-resistance vs. drain curre... |
| Description |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 280 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
| File Size |
124.53K /
4 Page |
View
it Online |
Download Datasheet |
|
For
50v 140ma Found Datasheets File :: 68 Search Time::2.11ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | |
▲Up To
Search▲ |
|
Price and Availability
|
