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				Alliance Semiconductor Corporation SEMICOA[Semicoa Semiconductor]
Part No.	AS6UA5128 AS6UA5128-BC AS6UA5128-BI
OCR Text	...anges available * Organization: 524,288 words x 8 bits * 2.7V to 3.6V at 55 ns * 2.3V to 2.7V at 70 ns * Low power consumption: ACTIVE - 144 mW at 3.6V and 55 ns - 68 mW at 2.7V and 70 ns - 41 W max at 2.7V - 28 W max at 2.3V * 1.2V dat...
Description	2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM 2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM 2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM) 2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM 2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
File Size	87.73K / 9 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616LV4020 BS616LV4020AC BS616LV4020AI BS616LV4020BC BS616LV4020BI BS616LV4020DC BS616LV4020DI
OCR Text	... as 262,144 words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
File Size	215.30K / 12 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI
OCR Text	...d as 262,144words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
File Size	222.10K / 11 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616LV4023 BS616LV4023BC BS616LV4023BI BS616LV4023DC BS616LV4023DI
OCR Text	...d as 262,144words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
File Size	217.16K / 11 Page	View it Online	Download Datasheet

				BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
Part No.	BS616LV4025 BS616LV4025BC BS616LV4025BI BS616LV4025DC BS616LV4025DI
OCR Text	... as 262,144 words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable 非常低功电压CMOS SRAM56K × 1612K × 8位开 LM5009 150 mA, 100V Step-Down Switching Regulator; Package: MINI SOIC; No of Pins: 8
File Size	187.58K / 11 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI
OCR Text	... as 262,144 words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with...
Description	Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
File Size	209.23K / 11 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
Part No.	M5M29FB800RV-80 M5M29FT800RV-80 M5M29FB800FP M5M29FB800RV-10 M5M29FB800RV-12 M5M29FB800VP 8MFSTD M5M29FB800FP-12 M5M29FB800VP-12 M5M29FT800FP-12 M5M29FB800VP-10 M5M29FT800FP-10 M5M29FT800VP-10 M5M29FT800RV-10 M5M29FT800RV-12 M5M29FB800FP-10 M5M29FT800VP-12 M5M29FB800VP-80 M5M29FT800FP M5M29FT800RV-80-10 M5M29FT800RV-80-12 M5M29FT800VP M5M29FT800VP-80
OCR Text	...8-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) DESCRIPTION The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories ...
Description	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY From old datasheet system 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
File Size	150.57K / 14 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M5M5V408BFP M5M5V408BKR M5M5V408BKV M5M5V408BRT M5M5V408BTP D98015_A M5M5V408BFP-85H M5M5V408BTP-85LW M5M5V408BFP-10H M5M5V408BFP-10HI M5M5V408BFP-10HW M5M5V408BFP-10L M5M5V408BFP-10LI M5M5V408BFP-10LW M5M5V408BFP-85HI M5M5V408BFP-85HW M5M5V408BFP-85L M5M5V408BFP-85LI M5M5V408BFP-85LW M5M5V408BKR-10H M5M5V408BKR-10HI M5M5V408BKR-10HW M5M5V408BKR-10L M5M5V408BKR-10LI M5M5V408BKR-10LW M5M5V408BKR-85H M5M5V408BKR-85HI M5M5V408BKR-85HW M5M5V408BKR-85L M5M5V408BKR-85LI M5M5V408BKR-85LW M5M5V408BKV-10H M5M5V408BKV-10HI M5M5V408BKV-10HW M5M5V408BKV-10L M5M5V408BKV-10LI M5M5V408BKV-10LW M5M5V408BKV-85H M5M5V408BKV-85HI M5M5V408BKV-85HW M5M5V408BKV-85L M5M5V408BKV-85LI M5M5V408BKV-85LW M5M5V408BRT-10H M5M5V408BRT-10HI M5M5V408BRT-10HW M5M5V408BRT-10LI M5M5V408BRT-10LW M5M5V408BRT-85H M5M5V408BRT-85HI M5M5V408BRT-85HW M5M5V408BRT-85L M5M5V408BRT-85LI M5M5V408BRT-85LW M5M5V408BTP-10H M5M5V408BTP-10HI M5M5V408BTP-10HW M5M5V408BTP-10L M5M5V408BTP-10LI M5M5V408BTP-10LW M5M5V408BTP-85H M5M5V408BTP-85HI M5M5V408BTP-85HW M5M5V408BTP-85L M5M5V408BTP-85LI M5M5V408BRT-10L
OCR Text	...4-Mbit static RAMs organized as 524,288-words by 8-bit, fabricated by Mitsubishi's highperformance 0.25m CMOS technology. The M5M5V408B is suitable for memory applications where a simple interfacing , battery operating and battery backup ar...
Description	From old datasheet system 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
File Size	160.82K / 14 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 TC55VBM316ASTN40 TC55VBM316ASTN55 TC55VBM316
OCR Text	524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits. Fabricated using...
Description	524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	212.13K / 15 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC55VCM208ASTN40 TC55VCM208ASTN55
OCR Text	524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM208ASTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this dev...
Description	524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
File Size	109.21K / 12 Page	View it Online	Download Datasheet

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