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  5v 20a Datasheet PDF File

For 5v 20a Found Datasheets File :: 7095    Search Time::1.734ms    
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    Alpha
Part No. AOL1418
OCR Text ...r ds(on) < 10.5m ? (v gs = 4.5v) general description the aol1418 uses advanced trench technology to provide excellent r ds(on) , low gat...20a total gate charge turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 , r gen...
Description N-Channel Enhancement Mode Field Effect Transistor N沟道增强型场效应

File Size 119.16K  /  5 Page

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    AOL141410

Alpha & Omega Semiconductors
Part No. AOL141410
OCR Text ... r ds(on) < 7.5m w (v gs = 4.5v) uis tested rg,ciss,coss,crss tested general description the aol1414 uses advanced trench technology to...20a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fal...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 167.75K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOL1413
OCR Text ...v) r ds(on) < 36m ? (v gs = -5v) the aol1413 uses advanced trench technology to provide excellent r ds(on) and ultra-low low gate charg...20a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250ua, v gs =0v v ...
Description P-Channel Enhancement Mode Field

File Size 465.00K  /  6 Page

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    AOL140808

Alpha & Omega Semiconductors
Part No. AOL140808
OCR Text ...v) r ds(on) < 6m ? (v gs = 4.5v) uis tested rg,ciss,coss,crss tested general description the aol1408 uses advanced trench technology to...20a, di/dt=100a/ s drain-source breakdown voltageon state drain current i d =250 a, v gs =0v v gs ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 204.40K  /  6 Page

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    SGP20N60HS SGW20N60HS

INFINEON[Infineon Technologies AG]
Part No. SGP20N60HS SGW20N60HS
OCR Text ...9V 7V 30A 9V 7V 20a 5v 20a 5v 10A 10A 0A 0V 2V 4V 6V 0A 0V 2V 4V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. T...
Description High Speed IGBT in NPT-technology

File Size 429.45K  /  12 Page

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    SKW20N60 Q67040-S4242

INFINEON[Infineon Technologies AG]
Part No. SKW20N60 Q67040-S4242
OCR Text ... 50A VGE=20V 15v 13V 11V 9V 7V 5v IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 40A 40A VGE=20V 15v 13V 11V 9V 7V 5v 30A 30A 20a 20a 10A 10A 0A 0V 1V 2V 3V 4V 5v 0A 0V 1V 2V 3V ...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 272.85K  /  14 Page

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    SPA20N60C2 SPB20N60C2 SPP20N60C2

INFINEON[Infineon Technologies AG]
Part No. SPA20N60C2 SPB20N60C2 SPP20N60C2
OCR Text ... 20 9V ID 50 10V 8.5v 20 8V 15 7.5v 10 8V 7V 6.5v 5 7V 6V V 30 0 0 5 10 15 V VDS ...20a 10 3 16 Typ. switching losses1) E = f (ID ), inductive load, Tj=125C par.: VDS=380V, VGS=0/...
Description for lowest Conduction Losses & fastest Switching
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor

File Size 161.92K  /  14 Page

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    AOL1404

Alpha & Omega Semiconductors
Part No. AOL1404
OCR Text 5v) 45a r ds(on) (at v gs =4.5v) < 4m ? r ds(on) (at v gs = 2.5v) < 5.6m ? 100% uis tested 100% r g tested symbol v ds v gs i dm...20a reverse transfer capacitance i f =20a, di/dt=500a/ s v gs =0v, v ds =10v, f=1mhz switching pa...
Description 20V N-Channel MOSFET

File Size 228.22K  /  6 Page

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    SPB20N60S5 SPP20N60S5

INFINEON[Infineon Technologies AG]
Part No. SPB20N60S5 SPP20N60S5
OCR Text ....2 1.1 1 0.9 0.8 0.7 ID 8.5v 20 8V 6V 6.5v 7V 7.5v 8V 8.5v 9V 10V 12V 20V 15 7.5v 10 7V 6.5v 0.6 0.5 0.4 5 6V 0 0 5 10 15 V VDS 25 0.3 0 5 10 15 20 25 30 A ID 40 ...
Description for lowest Conduction Losses
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 319.73K  /  11 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOL1404
OCR Text 5v) 45a r ds(on) (at v gs =4.5v) < 4m ? r ds(on) (at v gs = 2.5v) < 5.6m ? symbol v ds v gs i dm i as , i ar e as , e ar t j , t s...20a reverse transfer capacitance i f =20a, di/dt=500a/ s v gs =0v, v ds =10v, f=1mhz switching pa...
Description 20V N-Channel MOSFET

File Size 482.38K  /  6 Page

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