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  gate-commutated Datasheet PDF File

For gate-commutated Found Datasheets File :: 618    Search Time::1.203ms    
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    AT708 AT708S08

POSEICO[Power Semiconductors]
POSEICO SPA
Part No. AT708 AT708S08
OCR Text ...rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 39...
Description    PHASE CONTROL THYRISTOR

File Size 43.29K  /  4 Page

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    BT152B BT152B-400R BT152B-600R BT152B-800R BT152BSERIES

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BT152B BT152B-400R BT152B-600R BT152B-800R BT152BSERIES
OCR Text ... 3 mb DESCRIPTION cathode anode gate anode PIN CONFIGURATION mb SYMBOL a 2 1 3 k g LIMITING VALUES Limiting values in a...commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform gate open ...
Description Thyristors series(可控

File Size 48.17K  /  6 Page

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    BT152X BT152X-400R BT152X-600R BT152X-800R BT152XSERIES

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BT152X BT152X-400R BT152X-600R BT152X-800R BT152XSERIES
OCR Text ...1 2 3 DESCRIPTION cathode anode gate PIN CONFIGURATION case SYMBOL a k case isolated 123 g LIMITING VALUES Limitin...commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform gate open ...
Description Thyristors series(可控

File Size 47.81K  /  6 Page

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    BT152 BT152-400R BT152-600R BT152-800R

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BT152 BT152-400R BT152-600R BT152-800R
OCR Text ...3 tab DESCRIPTION cathode anode gate anode PIN CONFIGURATION tab SYMBOL a k 1 23 g LIMITING VALUES Limiting values in...commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform gate open ...
Description Thyristors

File Size 43.71K  /  6 Page

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    HBT169M

Hi-Sincerity Microelectronics
ETC[ETC]
List of Unclassifed Manufacturers
Part No. HBT169M
OCR Text ...on Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control appli...commutated ITM=1.6A; VR=35V; dITM/dt=30A/us turn-off time dVD/dt=2V/us; RGK=1k tq - 100 ...
Description THYRISTORS

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    MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Part No. MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D
OCR Text ...hannel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and s...commutated source-drain current versus re-applied drain voltage when the source-drain diode has unde...
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS

File Size 254.33K  /  8 Page

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    Philips
Part No. BT148SERIES
OCR Text gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are inten...commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 100...
Description logic level

File Size 34.12K  /  6 Page

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    Philips
Part No. BT148WSERIES
OCR Text gate thyristors in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applica...commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 100...
Description logic level

File Size 40.27K  /  7 Page

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    MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D

ON Semiconductor
Motorola, Inc.
Part No. MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D
OCR Text ...hannel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and s...commutated source-drain current versus re-applied drain voltage when the source-drain diode has unde...
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system

File Size 180.78K  /  8 Page

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    BT169

Philips Semiconductors
Part No. BT169
OCR Text gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applica...commutated turn-off time CONDITIONS VDM =67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 1k ...
Description Thyristor logic level

File Size 39.12K  /  7 Page

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For gate-commutated Found Datasheets File :: 618    Search Time::1.203ms    
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