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  gsm edge Datasheet PDF File

For gsm edge Found Datasheets File :: 1403    Search Time::2.125ms    
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    Siemens
Part No. XT65
OCR Text ... and logical GPS integration in gsm communication module for minimized total cost of ownership Compact size for footprint sensitive applicat...edge data speed at XT75 Precise localisation State-of-the-art GPS, A-GPS & DGPS enabled Preli...
Description The real tracking & tracing comes true

File Size 430.90K  /  12 Page

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    Freescale (Motorola)
Part No. MRF18090AR3
OCR Text ...de lateral mosfet designed for gsm and gsm edge base station applications with frequencies from 1.8 to 2.0 ghz. suitable for fm, tdma, cdma and multicarrier amplifier applications. to be used in class ab for gsm and gsm edge cellular radi...
Description 1.80–1.88 GHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET

File Size 228.93K  /  8 Page

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    TMXT504

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. TMXT504
OCR Text gsm edge - IF Preliminary Specification (Rev -) Operating Temperature range : [-10C ; +85C] Electrical Parameters Source Impedance (single ended) Load Impedance (single) Center Frequency fo Template on the amplitude, reference is loss...
Description SAW BANDPASS FILTER

File Size 154.27K  /  3 Page

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    TRIQUINT[TriQuint Semiconductor]
Part No. TQP4M4010
OCR Text gsm-edge Antenna Switch With Decoder Functional Block Diagram Top View RX2 16 Features TX2 13 12 GND 15 GND 14 Pin 1 N/C ANT 2.5 +/- 0.1 mm N/C N/C 3 10 1 Logic V2 Logic V1 Vdd 2 11 4 5 6 7 8 9 Logic GN...
Description SP4T High Power gsm-edge Antenna Switch With Decoder

File Size 324.68K  /  11 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MW6IC2015GNBR1
OCR Text ...ts for cellular applications: gsm, gsm edge, phs, tdma, cdma, w - cdma and td - scdma. final application ? typical two - tone performance: v dd = 26 volts, i dq1 = 100 ma, i dq2 = 170 ma, p out = 15 watts pep, full frequency band (180...
Description RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大

File Size 1,126.00K  /  28 Page

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    MRF6S20010GNR1 MRF6S20010NR1 MRF6S20010NR109

Freescale Semiconductor, Inc
Part No. MRF6S20010GNR1 MRF6S20010NR1 MRF6S20010NR109
OCR Text ...c in 30 khz bandwidth ? typical gsm edge performance: v dd = 28 volts, i dq = 130 ma, p out = 4 watts avg., full frequency band (1805- 1880 mhz) power gain ? 16 db drain efficiency ? 33% evm ? 1.3% rms ? capable of handling 5:1 vswr, @ ...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 689.40K  /  27 Page

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    NXP Semiconductors N.V.
Part No. BLF4G10LS-120
OCR Text ...andwidth 1.2 features n typical gsm edge performance at a frequency of 920 mhz and 960 mhz, a supply voltage of 28 v and an i dq of 650 ma u load power = 48 w (av) u gain = 19 db (typ) u ef?ciency = 40 % (typ) u acpr 400 = - 61 dbc (typ) u...
Description UHF power LDMOS transistor

File Size 91.25K  /  13 Page

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    BLF4G10S-120 BLF4G10-120

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BLF4G10S-120 BLF4G10-120
OCR Text ... 861 to 961 28 861 to 961 28 gsm edge 861 to 961 28 120 (PEP) 19 ACPR400 at 30 kHz resolution bandwidth ACPR600 at 30 kHz resolution bandwidth CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care sho...
Description UHF power LDMOS transistor
From old datasheet system

File Size 106.89K  /  14 Page

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    PMB8876

INFINEON[Infineon Technologies AG]
Part No. PMB8876
OCR Text ...streaming Applications gsm/E-GPRS/GPRS multimedia phones with tomorrow's multimedia requirements Minimum space E-GPRS/GPRS data mod...edge modem technology with second generation E-GPRS evolvement Feature flexibility through upgrade o...
Description S-GOLD2?Multimedia Engine with Advanced edge Modem Functionality
S-GOLD2-Multimedia Engine with Advanced edge Modem Functionality
S-GOLD2⑩-Multimedia Engine with Advanced edge Modem Functionality

File Size 198.65K  /  2 Page

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    BLF4G10LS-120

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BLF4G10LS-120
OCR Text ...al values. Mode of operation CW gsm edge 2-tone [1] [2] VDS (V) 28 28 28 PL (W) 120 48 (AV) Gp D (dB) (%) 19 19 57 40 46 ACPR400 (dBc) -61 [1] - ACPR600 (dBc) -72 [2] - EVM (%) 1.5 - IMD3 (dBc) -31 120 (PEP) 19 A...
Description UHF power LDMOS transistor

File Size 92.87K  /  13 Page

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