high power 5252 led pdf Datasheet P6 Description --- IC-ON-LINE


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high power 5252 led Datasheet PDF File

For high power 5252 led Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				ON Semiconductor
Part No.	BUD44D2-D
Description	high Speed, high Gain Bipolar NPN power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network power TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS
File Size	254.74K / 12 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SJ114
Description	high SPEED power SWITCHING, high FREQUENCY power AMPLIFIER
File Size	114.79K / 3 Page	View it Online	Download Datasheet

				RFMD[RF Micro Devices]
Part No.	TA0012
Description	New high power, high Efficiency HBT GSM power Amplifier
File Size	73.22K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	FD1000FH-56
Description	1000 A, 2800 V, SILICON, RECTIFIER DIODE high power, high FREQUENCY, PRESS PACK TYPE high power/ high FREQUENCY/ PRESS PACK TYPE
File Size	40.35K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) Agilent(Hewlett-Packard)
Part No.	HSMS-2700-BLK HSMS-2700-TR2 HSMS-2702-BLK HSMS-2702-TR2 HSMS-270B-BLK HSMS-2700 HSMS-2700-TR1 HSMS-2702 HSMS-2702-TR1 HSMS-270B HSMS-270B-TR1 HSMS-270C HSMS-270C-BLK HSMS-270C-TR1 HSMS-270C-TR2 HSMS-270B-TR2
Description	HSMS-270C · high power clipping/clamping diode HSMS-270B · high power clipping/clamping diode HSMS-2702 · high power clipping/clamping diode HSMS-2700 · high power clipping/clamping diode high Performance Schottky Diode for Transient Suppression
File Size	101.86K / 8 Page	View it Online	Download Datasheet

				Anadigics Inc ANADIGICS, Inc
Part No.	AWT6114
Description	The AWT6114 is a high power, high efficiency amplifier module for Korean Band PCS CDMA wireless handset applications. power Amplifiers KPCS CDMA 3.4V/28dBm Linear power Amplifier Module
File Size	121.68K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	CGD1046HI
Description	1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND high power AMPLIFIER
File Size	78.51K / 8 Page	View it Online	Download Datasheet

				Vicor, Corp. VICOR[Vicor Corporation]
Part No.	08-130097-B 08-130097
Description	Compant high-Insulation power Relay, Polarized, 10A 外形图式PFC MEGAPAC大功率（2.4KW OUTLINE DRAWING PFC MEGAPAC high power (2.4KW)
File Size	122.13K / 2 Page	View it Online	Download Datasheet

				CREE power
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

				ADPOW[Advanced power Technology] Advanced power Technology Ltd.
Part No.	APT1001RBLC APT1001RSLC APT1001
Description	power MOS VI 1000V 11A 1.000 Ohm power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE high VOLTAGE power MOSFETS
File Size	34.77K / 2 Page	View it Online	Download Datasheet

For high power 5252 led Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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