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				Samsung Electronic Samsung semiconductor
Part No.	KMM372F3200BK3 KMM372F3280BK3 KMM372F400CK KMM372F400CS KMM372F410CK KMM372F410CS
OCR Text	...changed maximum once within one hyper page mode cycle,tHPC. DRAM MODULE CAPACITANCE (TA = 25C, Vcc=3.3V, f = 1MHz) Item Input capacitan...B-R counter test cycle) Access time from CAS precharge Hyper page cycle time Hyper page read-modify-...
Description	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
File Size	453.66K / 20 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	KMM372F3200BS1 KMM372F3280BS1
OCR Text	... Access time from CAS precharge Hyper page cycle time Hyper page read-modify-write cycle time CAS precharge time(Hyper page cycle) RAS pulse...B-R refresh) W to RAS hold time(C-B-R refresh) OE access time OE to data delay Output buffer turn of...
Description	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
File Size	485.10K / 20 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	KMM372F3200CS1 KMM372F3280CS1
OCR Text	... Access time from CAS precharge Hyper page cycle time Hyper page read-modify-write cycle time CAS precharge time(Hyper page cycle) RAS pulse...B-R refresh) W to RAS hold time(C-B-R refresh) OE access time OE to data delay Output buffer turn of...
Description	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
File Size	502.74K / 20 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	KM416C12CJ-L5 KM416V12CJ-L5 KM416V10CJ-L5 KM416C10CJ-L5 KM416V12CJ-L45 KM416C10CJ-L45 KM416V10CJ-L45 KM416C12CJ-L45 KM416C1204C-45 KM416V1004C-45 KM416C1004C-45 KM416V1204C-45 KM416C10CJ-L6 KM416C12CJ-L6 KM416V10CJ-L6 KM416V12CJ-L6 KM416C1004C-6 KM416V1004C-6 KM416V1204C-6 KM416C1204C-6 KM416C10CT-L45 KM416V10CT-L45 KM416V12CT-L45 KM416C12CT-L45 KM416C10CT-L5 KM416C12CT-L5 KM416V10CT-L5 KM416V12CT-L5 KM416C12CT-L6 KM416V12CT-L6 KM416V10CT-L6 KM416V1204C-L6 KM416C10CT-L6
OCR Text	... within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45...B-R self refresh) RAS precharge time (C-B-R self refresh) CAS hold time (C-B-R self refresh) Symbol ...
Description	1M x 16Bit CMOS Dynamic RAM with Extended Data Out 100万16的CMOS动态随机存储器的扩展数据输
File Size	490.14K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	KMM5324104CKG KMM5324104CK KMM5324004CK KMM5324004CKG
OCR Text	... Access time from CAS precharge Hyper page mode cycle time CAS precharge time(Hyper page cycle) RAS pulse width(Hyper page cycle) RAS hold time from CAS precharge W to RAS precharge time(C-B-R refresh) W to RAS hold time(C-B-R refresh) Outp...
Description	4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
File Size	267.85K / 15 Page	View it Online	Download Datasheet

				Kingbright Corporation. Kingbright, Corp.
Part No.	BLF051SURC/E-6V BLF051SURC-E-6V
OCR Text	...d led lamp blf051surc/e-6v hyper red description the hyper red source color devices are made with dh ingaalp on gaas substrate ligh...b m y sl o b m y s l o b m y s l o b m y sl o b m y sr e t e m a r a pr e t e m a r a p r e t e m a ...
Description	5mm FLANGE BASED LED LAMP T-1 3/4 SINGLE COLOR LED, HYPER RED, 5 mm
File Size	56.76K / 3 Page	View it Online	Download Datasheet

				NEC, Corp.
Part No.	PD4265165
OCR Text	...stic tsop (ii). features ? edo (hyper page mode) ? 4,194,304 words by 16 bits organization ? single +3.3 v 0.3 v power supply ? fast ac...b y 16-bi t , ed o , byte read/write mode document no. m12282ej1v 1 ds00 (1st edition) date publish...
Description	64 M-Bit Dynamic Ram(64M 动态存储器) 64 m位动态随机存储器6400动态存储器
File Size	539.70K / 48 Page	View it Online	Download Datasheet

				International Business Machines, Corp.
Part No.	IBM0164405B
OCR Text	...cle time 84ns 104ns t hpc hyper page mode cycle time 20ns 25ns description the ibm0164405b/p is a dynamic ram organized 16,777,216...b y t c a c . 3 . operation within the t rad (max.) limit ensures that t r a c (max.) can be met. t...
Description	16M x 4 13/11 EDO DRAM(16M x 4 动态RAM（超页面模式并带24条地址线，其中13条为行地址选通，11条为列地址选通）) 1,600 × 4 13/11 EDO公司的DRAM,600 × 4动态随机存储器（超页面模式并带24条地址线，其中13条为行地址选通，11条为列地址选通）
File Size	368.65K / 29 Page	View it Online	Download Datasheet

				http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4E661612C-TC K4E641612C-TC50 K4E641612C-TC60 K4E641612C-TC45 K4E661612C-TC45 K4E661612C-TC60 K4E661612C-TC50 K4E641612C-T60 K4E661612C-T60 K4E661612C-45 K4E641612C-45 K4E661612C-L45 K4E661612C-60 K4E661612C-L50 K4E641612C-60 K4E641612C-50 K4E661612C-50 K4E661612C-L60 K4E641612C-TL60 K4E641612C-T50 K4E661612C-T50 K4E641612C-TL50 K4E641612C-T45 K4E641612C-TL45
OCR Text	... Access time from CAS precharge Hyper Page cycle time Hyper Page read-modify-write cycle time CAS precharge time (Hyper page cycle) RAS puls...B-R refresh) W to RAS hold time (C-B-R refresh) Output data hold time Output buffer turn off delay f...
Description	CABLE ASSEMBLY; SMA MALE TO SMA FEMALE BULKHEAD; 50 OHM, RG58C/U COAX; 36" CABLE LENGTH; 4M x 16bit CMOS Dynamic RAM with Extended Data Out 4米16位的CMOS动态随机存储器的扩展数据输
File Size	890.21K / 36 Page	View it Online	Download Datasheet

For hyper-b Found Datasheets File :: 733 Search Time::2.141ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |