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INTERSIL[Intersil Corporation]
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Part No. |
CD4514BMS06 CD4514BMS
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OCR Text |
...PARAMETER Supply Current SYMBOL idd CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 VDD = 18V Outp... |
Description |
CMOS 4-Bit Latch/4-to-16 Line Decoders
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File Size |
283.93K /
9 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
ICM717003 ICM7170IPG ICM7170 ICM7170AIBG ICM7170AIPG ICM7170IBG
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OCR Text |
... Unless Otherwise Specified All idd specifications include all input and output leakages (ICM7170 and ICM7170A) TEST CONDITIONS fOSC = 32kHz fOSC = 1, 2, 4MHz MIN 1.9 2.6 ICM7170 TYP 1.2 MAX 5.5 5.5 20.0 UNITS V V A
Standby Current, ISTB... |
Description |
REAL TIME CLOCK, PDIP24 Microprocessor-Compatible, Real-Time?lock Microprocessor-Compatible, Real-Time?lock
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File Size |
248.26K /
14 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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Part No. |
ICM721301 ICM7213IPD ICM7213
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OCR Text |
...ions
PARAMETER Supply Current, idd
VDD - VSS = 3.0V, fOSC = 4.194304MHz, Test Circuit, TA = 25oC, Unless Otherwise Specified TEST CONDITIONS -20oC to 85oC Any output, VOUT = 6V Any output, IOLK = 2.5mA Inhibit terminal connected to VDD ... |
Description |
One Second/One Minute Timebase Generator
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File Size |
111.03K /
6 Page |
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it Online |
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IRF MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA03M8894M RA03M8894M-101 RDHA710SE10A2FK
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OCR Text |
...s INPUT POWER
50 DRAIN CURRENT idd(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 40
Gp Pout
5 4 3 2
idd
f=889MHz, VDD=7.2V, VGG=3.5V
5 4 3
idd
f=914MHz, VDD=7.2V, VGG=3.5V
30 20 10 0 -15 -10 -5 0 5
30 20 10 0 -15 -10 -5 0 5
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Description |
889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO Radiation Hardended, Solid-State Relay with Buffered Inputs
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File Size |
90.50K /
8 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RD30HVF1 RD30HVF1-101
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OCR Text |
...Hz,30W
50 Po(dBm) , Gp(dB) , idd(A) 40 30 20 10 0 0
Po
100 40 80
80 60
Ta=25C f=175MHz Vdd=12.5V Idq=0.5A idd
Pout(W) , idd(A)
Gp
d(%)
40 20 0 10 20 Pin(dBm) 30
20 10 0 0 0.5 1 1.5 Pin(W)
40 20 0 2.5
2
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Description |
Silicon MOSFET Power Transistor,175MHz,30W
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File Size |
358.73K /
8 Page |
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it Online |
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